The influence of thermal annealing on the dielectric properties of ZnGeP2 crystals in the terahertz frequency range is studied by terahertz time domain spectroscopy. The effect of “transformation” of a positive birefringent ZnGeP2 crystal into a negative one is found upon transition from the IR to the terahertz frequency range. A decrease of the absorption coefficients and refractive indices in the frequency range of 0.25–2.5 THz after annealing of the crystals at temperatures of 575–700°C for 300–400 hours is also revealed.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 122–125, August, 2021.
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Voevodin, V.I., Yudin, N.N. & Sarkisov, S.Y. Influence of Thermal Annealing on Terahertz Dielectric Properties of ZnGeP2 Crystals. Russ Phys J 64, 1513–1516 (2021). https://doi.org/10.1007/s11182-021-02484-2
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DOI: https://doi.org/10.1007/s11182-021-02484-2