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Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures

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Russian Physics Journal Aims and scope

The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN multiple quantum wells and GaN barrier layers with the thicknesses of 3, 10, and 15 nm are presented. It is shown that a decrease in the thicknesses of the GaN barrier layers results in a blue shift of the wavelength of LED structures and in an increase of internal quantum efficiency of the structure at high excitation power density.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. S. Romanov, I. A. Prudaev, V. N. Brudnyi, V. V. Kopyev & Vad. A. Novikov

  2. Co. Ltd SigmPlyus, Moscow, Russia

    A. A. Marmalyuk, V. A. Kureshov, D. R. Sabitov & A. V. Mazalov

Authors
  1. I. S. Romanov
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  2. I. A. Prudaev
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  3. V. N. Brudnyi
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  4. V. V. Kopyev
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  5. Vad. A. Novikov
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  6. A. A. Marmalyuk
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  7. V. A. Kureshov
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  8. D. R. Sabitov
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  9. A. V. Mazalov
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Corresponding author

Correspondence to I. S. Romanov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 110–113, July, 2015.

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Romanov, I.S., Prudaev, I.A., Brudnyi, V.N. et al. Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures. Russ Phys J 58, 996–1000 (2015). https://doi.org/10.1007/s11182-015-0600-z

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  • DOI: https://doi.org/10.1007/s11182-015-0600-z

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