Galvanomagnetic Properties of Thin-Film (Fe, Co, Ni)/Rare Earth Metal Oxide Structures

The magnetic interaction between contacting films of 3d and 4f metals has long been known to promote the formation of complex magnetic structures promising for spintronic applications. The replacement of 4f metals by their oxides, mainly possessing paramagnetic and dielectric properties, opens up an opportunity to create systems with both magnetic and electric complex structures. This further extends the applications of such multilayer films. However, the study of the (Fe, Co, Ni)/rare earth metal (REM) oxide systems is still in the initial stage. The dependence of galvanomagnetic properties (magnetoresistance and magnetization) on the chemical composition of layers in the (Fe, Co, Ni)/REM oxide system and magnetic field strength suggests that there is magnetic interaction between the 3d and 4f electronic shells at interface. The maximum increase in these parameters is observed in the Fe/Dy₂O₃ system when the magnetic field vector is parallel to the current through the metal film.