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Molecular beam epitaxy of CdSe and the derivative alloys Zn1−x Cd x Se and Cd1−x M x Se

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Abstract

We report the epitaxial growth of CdSe, Zn1−x Cd x Se (0 ≤x ≤ 1) and Cd1−x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1−x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.

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Authors and Affiliations

  1. Dept. of Physics, University of Notre Dame, 46556, Notre Dame, IN

    N. Samarth, H. Luo & J. K. Furdyna

  2. Naval Research Laboratory, 20375, Washington, DC

    S. B. Qadri

  3. Dept. of Physics, Purdue University, 47907, W. Lafayette, IN

    Y. R. Lee & A. K. Ramdas

  4. Dept. of Materials Engineering, Purdue University, 47907, W. Lafayette, IN

    N. Otsuka

Authors
  1. N. Samarth
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  2. H. Luo
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  3. J. K. Furdyna
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  4. S. B. Qadri
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  5. Y. R. Lee
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  6. A. K. Ramdas
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  7. N. Otsuka
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Samarth, N., Luo, H., Furdyna, J.K. et al. Molecular beam epitaxy of CdSe and the derivative alloys Zn1−x Cd x Se and Cd1−x M x Se. J. Electron. Mater. 19, 543–547 (1990). https://doi.org/10.1007/BF02651276

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  • DOI: https://doi.org/10.1007/BF02651276

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