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Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics

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Abstract

This paper reports quantum mechanical study to optimize the type-I AlN/GaN/InAlN QW (quantum well) heterostructure and investigates the optical gain characteristics. The heterostructure studied here has single QW of InAlN (~ 10 nm well width) with barrier as GaN (~ 20 nm width) and grown with the claddings of AlN binary semiconductor material (~ 100 nm width). The optical gain spectra have been calculated by solving the 6 × 6 Luttinger–Kohn Hamiltonian considering the effective mass approximation. The optical characteristics of the designed QW heterostructure have been studied for the different well width of the QW heterostructure. For the InGaN/GaN QW heterostructure, by reducing the well width, the peak gain has been improved with blue shift in wavelength, which can be considered as significant increase in the peak gain. This study may be advantageous in designing the tunable III-nitride optoelectronic devices.

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Acknowledgements

Richa Dolia and P. A. Alvi are highly thankful to DST, Govt. of India for facilitate the research work in terms of computational facilities provided at the Banasthali Vidyapith.

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Authors and Affiliations

  1. Department of Electronics, Banasthali Vidyapith, Banasthali, Rajasthan, 304022, India

    Richa Dolia

  2. Department of Electrical Engineering, College of Engineering, Qassim University, Unaizah, Saudi Arabia

    A. M. Quraishi

  3. Higher Colleges of Technology, P.O. Box 25035, Abu Dhabi, United Arab Emirates

    Sandhya Kattayat

  4. Higher Colleges of Technology, P.O. Box 7947, Sharjah, United Arab Emirates

    Smitha Josey

  5. Department of Pure and Applied Physics, University of Kota, Kota, Rajasthan, 324005, India

    Saurabh Dalela

  6. Department of Physics, College of Science, Jouf University, P.O. Box 2014, Sakaka, Saudi Arabia

    Mohammed Ezzeldien

  7. Department of Physics, Banasthali Vidyapith, Banasthali, Rajasthan, 304022, India

    P. A. Alvi

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  1. Richa Dolia
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Dolia, R., Quraishi, A.M., Kattayat, S. et al. Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics. Opt Quant Electron 54, 855 (2022). https://doi.org/10.1007/s11082-022-04275-6

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