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Analytical investigation of activation energy for Mg-doped p-AlGaN

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Abstract

An analytical model has been developed to investigate the activation energy profile in Mg-doped p-AlxGa1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is < 1017 cm−3 while the Al content, x > 30% in p-AlxGa1-xN. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics.

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Acknowledgements

This work was supported by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, under grant No. (DF-292-135-1441). The authors, therefore, gratefully acknowledge DSR technical and financial support.

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Authors and Affiliations

  1. Department of Electrical, Electronic and Communication Engineering, Military Institute of Science & Technology, Dhaka, 1216, Bangladesh

    Md. Soyaeb Hasan

  2. Department of Electrical and Computer Engineering (ECE), King Abdulaziz University, Jeddah, Saudi Arabia

    Ibrahim Mustafa Mehedi

  3. Center Excellence in Intelligent Engineering Systems (CEIES), King Abdulaziz University, Jeddah, Saudi Arabia

    Ibrahim Mustafa Mehedi

  4. Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna, 9203, Bangladesh

    S. M. Faruk Reza, Md Rejvi Kaysir & Md Rafiqul Islam

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  1. Md. Soyaeb Hasan
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Correspondence to Ibrahim Mustafa Mehedi.

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Hasan, M.S., Mehedi, I.M., Reza, S.M.F. et al. Analytical investigation of activation energy for Mg-doped p-AlGaN. Opt Quant Electron 52, 348 (2020). https://doi.org/10.1007/s11082-020-02462-x

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