Skip to main content
SpringerLink
Log in

Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping

  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

The development and application of nitride-based light-emitting diodes (LEDs) is handicapped by the low hole conductivity of Mg-doped layers. Mg-doping becomes increasingly difficult with higher Al-content of the p-AlGaN layers as required for ultra-violet (UV) light emission. Polarization-induced hole doping of graded AlGaN was recently demonstrated as an alternative doping method. Using advanced numerical device simulation, this paper investigates the impact of polarization-doping on the internal device physics of UV-LEDs and compares the conventional Ga-face growth to the novel N-face growth direction. Various LED design options are explored to maximize the internal quantum efficiency.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • APSYS by Crosslight software. www.crosslight.com

  • Bernardini F.: Spontaneous and piezoelectric polarization: basic theory vs. practical recipes. In: Piprek, J. (ed.) Nitride Semiconductor Devices-Principles and Simulation, Weinheim, Wiley-VCH (2007)

    Google Scholar 

  • Hirayama H. et al.: Marked enhancement in the efficiency of deep-ultraviolet alGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer. Appl. Phys. Express 3, 031002 (2010)

    Article  ADS  Google Scholar 

  • Piprek J., Li S.: GaN-based light-emitting diodes. In: Piprek, J. (eds) Optoelectronic Devices: Advanced Simulation and Analysis, Springer, New York (2005)

    Chapter  Google Scholar 

  • Piprek J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Stat. Sol. A 207, 2217–2225 (2010)

    Article  ADS  Google Scholar 

  • Piprek J., Li S.: Electron leakage effects on GaN-based light-emitting diodes. Opt. Quantum Electron. 42, 89–95 (2010)

    Article  Google Scholar 

  • Simon J. et al.: Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science 327, 60–64 (2010)

    Article  ADS  Google Scholar 

  • Zhang L. et al.: Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure. Appl. Phys. Lett. 97, 062103 (2010)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. NUSOD Institute LLC, Newark, DE, 19714-7204, USA

    Joachim Piprek

Authors
  1. Joachim Piprek
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Joachim Piprek.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Piprek, J. Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping. Opt Quant Electron 44, 67–73 (2012). https://doi.org/10.1007/s11082-011-9509-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11082-011-9509-0

Keywords

Search

Navigation