Abstract
In this work, a fabrication process of high crystallinity CZTSSe absorber layer is presented. The CZTS structure is firstly prepared by spin-coating method then the film is converted into CZTSSe via selenization process using graphite box and tube furnace. Se powder has been used as source of selenizing vapors. By keeping the annealing temperature as constant and changing the mass of Se powder, the structural, optical, electrical properties, and composition of CZTSSe thin films are investigated. With substitution of S by Se, the smoothly, densely packed morphology and large grain size have been achieved. At optimal Se mass, the p-type CZTSSe film has bandgap energy, hole concentration, and resistivity of 1.27 eV, 1.7 × 1019cm−3 and 0.57 Ω.cm respectively which are suitable for photovoltaic application.
Highlights
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High crystallinity CZTSSe absorber layer are successfully prepared by spin-coating method on glass substrates and selenization process using Se powder.
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The influence of the Se powder content in selenization process on the crystal growth, optical, electrical properties, and surface morphology of CZTSSe thin films is investigated.
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At optimal Se amount of 0.02 g, the p-type CZTSSe film had bandgap energy, hole concentration and resistivity of 1.27 eV, 1.7 × 1019 cm-3 and 0.57 Ω cm respectively which were suitable for photovoltaic application.
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References
Wang W, Wang G, Chen G, Chen S, Huang Z (2017) Sol Energy 148:12–16
Lai FI, Yang JF, Wei YL, Kuo SY (2017) Green Chem 19:795–802
Yeh MY, Lee C, Wuu DS (2009) J Sol-Gel Sci Technol 52:65–68
Vauche L, Dubois J, Laparre A, Mollica F, Bodeux R, Delbos S, Ruiz CM, Pasquinelli M, Bahi F, Monsabert TG, Jaime S, Bodnar S, Grand PP (2014) Phys Status Solidi A 9:2082–2085
Guo J, Pei Y, Zhou Z, Zhou W, Kou D, Wu S (2015) Nanoscale Res Lett 10:335
Phan Thi KL, Anh Tuan D, Huu Ke N, Anh LTQ, Hung LVT (2017) J Sol-Gel Sci Technol 83:324
Xiao ZY, Yao B, Li YF, Ding ZH, Gao ZM, Zhao HF, Zhang LG, Zhang ZZ, Sui YR, Wang G (2016) ACS Appl Mater Interfaces 8:17334–17342
Woo K, Kim Y, Yang W, Kim K, Kim I, Oh Y, Kim JY, Moon J (2013) Sci Rep 3:3069
Ke NH, Trinh LTT, Mung NT, Loan PTK, Tuan DA, Truong NH, Tran CV, Hung LVT (2017) J Nanosci Nanotechnol 17:634–639
Wang G, Zhao W, Cui Y, Tian Q, Gao S, Huang L, Pan D (2013) ACS Appl Mater Interfaces 5:10042–10047
Ke NH, Loan PTK, Tuan DA, Dat HT, Tran CV, Hung LVT (2017) J Photochem Photobiol A 349:100–107
Tian Q, Wang G, Zhao W, Chen Y, Yang Y, Huang L, Pan D (2014) Chem Mater 26:3098–3103
Bag S, Gunawan O, Gokmen T, Zhu Y, Todorov TK, Mitzi DB (2012) Energy Environ Sci 5:7060–7065
Duan HS, Yang W, Bob B, Hsu CJ, Lei B, Yang Y (2013) Adv Funct Mater 23:1466–1471
Tanaka K, Fukui Y, Moritake N, Uchiki H (2011) Sol Energy Mater Sol Cells 95:838–842
Lin X, Kavalakkatt J, Kornhuber K, Levcenko S, Steiner MCL, Ennaoui A (2013) Thin Solid Films 535:10–13
Yang G, Li YF, Yao B, Ding ZH, Deng R, Zhao HF, Zhang LG, Zhang ZZ (2017) Superlattices Microstruct 109:480–489
Agawane GL, Kamble AS, Vanalakar SA, Shin SW, Gang MG, Yun JH, Gwak J, Moholkar AV, Kim JH (2015) Mater Lett 158:58–61
Aaron D, Barkhouse R, Gunawan O, Gokmen T, Todorov TK, Mitzi DB (2012) Prog Photovolt Res Appl 20:6–11
Just J, Sutter-Fella CM, Lutzenkirchen-Hecht D, Frahm R, Schorr S, Unold T (2016) Phys Chem Chem Phys 18:15988–15994
Ilari GM, Fella CM, Ziegler C, Uhl AR, Romanyuk YE, Tiwari AN (2012) Sol Energy Mater Sol Cells 104:125–130
Jiang M, Li Y, Dhakal R, Thapaliya PS, Mastro MA, Caldwell J, Kub FJ, Yan X (2011) J Photon Energy 1:019501
Fella CM, Romanyuk YE, Tiwari AN (2013) Sol Energy Mater Sol Cells 119:276–277
Rajesh G, Muthukumarasamy N, Subramaniam EP, Agilan S, Velauthapillai D (2013) J Sol Gel Sci Technol 66:288–292
Sun L, He J, Kong H, Yue F, Yang P, Chu J (2011) Sol Energy Mater Sol Cells 95:2907–2913
Prabeesh P, Packia Selvam I, Potty SN (2016) Thin Solid Films 606:94–98
Fernandes PA, Salome PMP, Da Cunha AF (2009) Thin Solid Films 517:2519–2523
Mkawi EM, Ibrahim K, Ali MKM, Farrukh MA, Mohamed AS, Allam NK (2014) J Electroanal Chem 735:129–135
Acknowledgements
We wish to acknowledge Vuong Nguyen Phuong Loan and To Thi Kim Ngan for their technical assistance in the experiments. This research was supported by Vietnam National University (VNU-HCM), Ho Chi Minh City, [grant number C2017-18-26].
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Tuan, D.A., Ke, N.H., Thi Kieu Loan, P. et al. A method to improve crystal quality of CZTSSe absorber layer. J Sol-Gel Sci Technol 87, 245–253 (2018). https://doi.org/10.1007/s10971-018-4708-9
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DOI: https://doi.org/10.1007/s10971-018-4708-9