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Preparation and characterization of all-oxide CuFeO2:Zn/ZnO:Al transparent heterojunction diode by using all-chemical solution deposition

  • Original Paper: Sol-gel and hybrid materials for optical, photonic and optoelectronic applications
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Abstract

Transparent p-n heterojunction thin-film diodes have been fabricated through an all-chemical solution deposition as a low-cost and large-scale method. In this order, we firstly studied the structural, optical and electrical properties of fabricated n-ZnO:Al and p-CuFeO2:Zn layers. The deposited ZnO:Al thin film showed a transmission more than 90 % in the visible range, and its smooth surface provided a suitable substrate for preparation of the diode. The current–voltage characteristic of the CuFeO2:Zn/ZnO:Al p-n junction demonstrated rectifying property. The diode with a total thickness of 1240 nm exhibited around 60 % optical transparency in the visible region which makes it suitable for invisible electronic and optoelectronic devices.

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Authors and Affiliations

  1. Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin, 1983969411, Tehran, Iran

    M. Asemi, H. Mameghani & M. Ghanaatshoar

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  1. M. Asemi
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  2. H. Mameghani
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  3. M. Ghanaatshoar
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Correspondence to M. Ghanaatshoar.

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Asemi, M., Mameghani, H. & Ghanaatshoar, M. Preparation and characterization of all-oxide CuFeO2:Zn/ZnO:Al transparent heterojunction diode by using all-chemical solution deposition. J Sol-Gel Sci Technol 80, 201–207 (2016). https://doi.org/10.1007/s10971-016-4067-3

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  • DOI: https://doi.org/10.1007/s10971-016-4067-3

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