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Effect of Post Annealing Process on Electrical and Magnetic Properties of Nd0.7Sr0.3MnO3 Thin Films

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Abstract

Nd0.7Sr0.3MnO3 thin films were deposited on (001) Al2O3 substrate by using rf-magnetron sputtering unit. The effect of post-annealing on the structural, electrical and magnetic properties are studied. These films exhibit orthorhombic structure and the compressive strain is found to decrease with increase in annealing temperature. Raman studies at room temperature show four well-resolved Raman peaks due to two A g , B 2g and B 3g modes. One of the Raman lines is found to be sensitive to lattice strain and it disappears upon annealing the film at 900 °C. All the annealed films show double exchange ferromagnetic transition and the transition temperature increases upon increase in annealing temperature due to the reduced lattice strain and the improved oxygen stoichiometry. These films show metal-insulator transition and the resistivity data in the metallic region could be fitted to the empirical relation ρ = ρ 0 + ρ 2.5 T 2.5 while the resistivity in the semiconducting region could be fitted to variable range hopping model.

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References

  1. Rao, C.N.R., Raveau, B.: Colossal magnetoresistance, charge ordering and related properties of manganese oxides. World Scientific, Singapore (1998)

    Book  Google Scholar 

  2. Yang, S.Y., Kuang, W.L., Liuo, Y., Tse, W.S., Lee, S.F., Yao, Y.D.: Growth and characterisation of La0.7Sr0.3MnO3 thin films on different substrates. J. Mag.Mag. Mat 268, 326–331 (2004)

    Article  ADS  Google Scholar 

  3. Ranno, L., Llobet, A., Tiron, R., Favre-Nicolin, E.: Strain induced magnetic anisotropy in epitaxial manganite films. Appl. Surf.Sci. 188, 170–175 (2002)

    Article  ADS  Google Scholar 

  4. Thiele, C., Dorr, K., Bilani, O., Rodel, J., Schultz, L.: Influence of strain on magnetisation and magnetoelectric effect in La0.7A0.3MnO3/PMT-PT(001)(A = Sr, Ca). Phys. Rev. B 75, 054408-1–054408-7 (2007)

    Article  ADS  Google Scholar 

  5. Aruta, C., Ghiringhelli, G., Tebano, A., Boggi, N.G., Brookes, N.B., Medaglia, P.G., Balestrino, G.: Strain induced x-ray absorption linear dichroism n La0.7Sr0.3MnO3 thin films. Phys. Rev. B. 73, 235121-1–235121-7 (2006)

    Article  ADS  Google Scholar 

  6. Sun, J.Z., Abraham, D.W.: Thickness dependent ultra manganite thin films. Appl. Phys. Letts. 74, 3017–3019 (1996)

    Article  ADS  Google Scholar 

  7. Jain, M., Li, Y., Hundley, M.F., Hawley, M., Maiorov, B., Campbell, I.H., Civale, L., Jia, Q.X., Shukla, P., Burrell, A.K., McCleskey, T.M.: Magneto resistance in polymer-assisted deposited Sr and Ca lanthanum manganite thin films. Appl. Phys. Letts. 88, 232510–1–232510-3 (2006)

  8. Goyal, A., Rajeswari, M., Shreekala, R., Lofland, S.E., Bhagat, S.M., Boettcher, T., Kwon, C., Ramesh, R., Venkatesan, T.: Material characteristics of perovskite manganese oxide thin films for bolometric applications. Appl. Phys. Letts 7, 2535–2537 (1997)

    Article  ADS  Google Scholar 

  9. Wang, J.F., Wu, Z.P., Gao, J.: Electric currents induced step-like resistive jumps and negative differential resistance in thin films of Nd0.7Sr0.3MnO3. J. Appl. Phys. 111, 07E131 (2012)

  10. Iliev, M.N., Abrashev, M.V., Lee, H.-G., Popov, V.N., Sun, Y.Y., Thomsen, C., Meng, R.L., Chu, C.W.: Raman spectroscopy of orthorhombic perovskite like Y M n O 3 and L a M n O 3. Phys. Rev. B 57, 2872–2877 (1998)

    Article  ADS  Google Scholar 

  11. Podobedov, V.B., Romero, D.B., Weber, A., Rice, J.P., Schreekala, R., Rajeswari, M., Ramesh, R., Venkatesan, T., Drew, H.D.: Diagnostics of colossal magnetoresistance manganite films by Raman spectroscopy. Appl. Phys. Lett. 73, 3217–3219 (1998)

    Article  ADS  Google Scholar 

  12. Malde, N, de Silva, P.S.I.P.N., Akther Hossain, A.K.M., Cohen, L.F., Thomas, K.A., MacManus-Driscoll, J.L., Mathur, N.D., Blarnire, M.G.: Influence of oxygen stoichiometry on Raman phonon spectroscopy, lattice parameters and physical propertes La0.7Ca0.3MnO3 thin films. Sol.stat. Comm 105, 643–648 (1998)

    Article  ADS  Google Scholar 

  13. Pattabiraman, M., Ranganarajan, G., Choi, K-Y., Lemmens, P., Guentherodt, G., Balakrishnan, G., Paul, D.M.K., Lees, M. R.: Polarisaion of Raman scattering in single crystals off Nd0.7Sr0.3MnO3. Pramana 58, 1013–1017 (2002)

    Article  ADS  Google Scholar 

  14. De Teresa, J.M., Ibarra, M.R., Blasco, J., Garcia, J., Marquina, C., Algarabel, P.A., Arnold, Z., Kamenev, K., Ritter, C., von Helmolt, R.: Spontaneous behavior and magnetic field and pressure effects on L a 2/3 C a 1/3 M n O 3 perovskite. Phys. Rev. B 54, 1187–1193 (1996)

    Article  ADS  Google Scholar 

  15. Paul, D.K., Mitra, S.S.: Evaluation of Mott’s parameters for hopping conduction in amorphous Ge, Si, and Se-Si. Phys. Rev. Lett. 31, 1000–1003 (1973)

    Article  ADS  Google Scholar 

  16. Abdelkhalek, S.B., Kallel, N., Kallel, S., Guizouarn, T., Pea, O., Oumezzine, M.: J. Supercond. Nov. Magn. 26, 3171–3180 (2013)

    Article  Google Scholar 

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Acknowledgments

Authors are thankful to the Department of Science and Technology (DST), New Delhi, for FIST XRD facility, (ref. no: SR/FST/PSII-20/2009), for the research grant, vide ref. no. SR/S2/CMP-0078/2010. Central Instruments facility (CIF), IIT, Guwahati, is also acknowledged for instruments.

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  1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam, 781039, India

    T. R. Gopalarao, S. Ravi & D. Pamu

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  1. T. R. Gopalarao
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  2. S. Ravi
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  3. D. Pamu
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Correspondence to S. Ravi.

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Gopalarao, T.R., Ravi, S. & Pamu, D. Effect of Post Annealing Process on Electrical and Magnetic Properties of Nd0.7Sr0.3MnO3 Thin Films. J Supercond Nov Magn 28, 1571–1576 (2015). https://doi.org/10.1007/s10948-014-2879-3

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  • DOI: https://doi.org/10.1007/s10948-014-2879-3

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