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Diode-Side-Pumped Passively Q-Switched Nd:YAP Laser Operating at 1.34 μm with V3+:YAG Saturable Absorber

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Abstract

To the best of our knowledge, we have demonstrated, for the first time, a diode-side-pumped passively-Q-switched Nd:YAP laser operating at 1.34 μm with V3+:YAG used as a saturated absorber. In the passively Q-switched regime, we reached the highest output power of 7.52 W, the shortest pulse width of 197 ns, the largest pulse energy of 1.36 mJ, and the highest peak power of 6.93 kW with a V3+:YAG crystal used as the saturated absorber.

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Authors and Affiliations

  1. Jilin Key Laboratory of Solid Laser Technology and School of Applied Science, Changchun University of Science and Technology, Changchun, 130022, China

    Chen Xinyu, Liu Jingliang, Yu Yongji, Li Taojie, Sun Hongtao & Jin Guangyong

Authors
  1. Chen Xinyu
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  2. Liu Jingliang
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  3. Yu Yongji
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  4. Li Taojie
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  5. Sun Hongtao
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  6. Jin Guangyong
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Corresponding author

Correspondence to Jin Guangyong.

Additional information

Manuscript submitted by the authors in English on January 28, 2015.

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Xinyu, C., Jingliang, L., Yongji, Y. et al. Diode-Side-Pumped Passively Q-Switched Nd:YAP Laser Operating at 1.34 μm with V3+:YAG Saturable Absorber. J Russ Laser Res 36, 86–91 (2015). https://doi.org/10.1007/s10946-015-9481-4

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  • DOI: https://doi.org/10.1007/s10946-015-9481-4

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