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Design, Simulation and Fabrication of Highly Sensitive Cooled Silicon Bolometers for Millimeter-Wave Detection

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Abstract

This paper reports our results on the electrothermal modeling of cryogenic silicon bolometers with pixel pitches of 500 and 1200 µm designed for cosmic microwave background polarimetric observation in 0.6 mm and 1.5 mm bands. These detectors should provide a high responsivity, typically around 1011 V/W, and a very low noise equivalent power (NEP) of 10−18 W/Hz1/2 between 50 and 100 mK. They are based on doped silicon thermometers, which exhibit a nonohmic behavior described by the “hot electron model” (HEM) at very low temperature under high bias currents. We compare this model to the experimental characterization of these thermometers at cryogenic temperatures to confirm that the HEM is governing their electrical characteristics and their sensitivity at very low temperature. Finally, this model is used to derive the simulated responsivity and NEP performances of the pixels under weak and moderate optical power illumination.

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Notes

  1. In the VRH regime, the conduction results from localized states in a narrow band around the Fermi level. For an intermediate compensation (K = Na/Nd ~ 0.5), there is no region close to the Fermi level where the density of states is constant because the Coulomb gap is maximum. Consequently, at low enough temperature, which is activating the hopping process, the effect of the Coulomb gap is noticeable: there is no region where γ = ¼ (Mott model) [5].

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Acknowledgements

The authors would like to thank A. Charpentier, O. Girard, P. Sixt, N. Bernard-Henriques from CEA-TECH (Grenoble, France) for their help during the samples fabrication. This work has been partially supported by the LabEx FOCUS ANR-11-LABX-0013.

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Authors and Affiliations

  1. CEA, LETI, MINATEC Campus, 38054, Grenoble, France

    A. Aliane, L. Dussopt, W. Rabaud, J-L. Ouvrier-Buffet, V. Goudon, H. Kaya, C. Vialle & S. Becker

  2. Univ. Grenoble Alpes, 38000, Grenoble, France

    A. Aliane, L. Dussopt, W. Rabaud, J-L. Ouvrier-Buffet, V. Goudon, H. Kaya, C. Vialle & S. Becker

  3. IRFU, CEA, Université Paris-Saclay, 91191, Gif-Sur-Yvette, France

    O-A. Adami, L. Rodriguez, J-L. Sauvageot & V. Reveret

  4. Max-Planck-Institut für Extraterrestrische Physik, Garching, Germany

    A. Poglitsch

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  1. A. Aliane
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  2. O-A. Adami
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Aliane, A., Adami, OA., Dussopt, L. et al. Design, Simulation and Fabrication of Highly Sensitive Cooled Silicon Bolometers for Millimeter-Wave Detection. J Low Temp Phys 199, 56–64 (2020). https://doi.org/10.1007/s10909-020-02405-6

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  • DOI: https://doi.org/10.1007/s10909-020-02405-6

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