A study has been made of the activation energy of the conductance of a p–n-4H-SiC 〈Al〉 structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 93, No. 4, pp. 1072–1077, July–August, 2020.
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Zhuraev, K.N., Yusupov, A., Gulyamov, A.G. et al. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion. J Eng Phys Thermophy 93, 1036–1041 (2020). https://doi.org/10.1007/s10891-020-02205-5
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DOI: https://doi.org/10.1007/s10891-020-02205-5