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Manipulating the interlayer exchange coupling in CoFeB/Ta/CoFeB multilayered spin valve for magnonic applications

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Abstract

Magnetic multilayered spin valve is the fundamental element for constructing high frequency spintronics devices such as magnetic random-access memory (MRAM). We prepared CoFeB/Ta/CoFeB sandwich spin valve with different interlayer thickness of Tantalum (Ta) on Si substrates using the RF magnetron sputtering technique and investigated the effect of Ta on the static and dynamic magnetic properties of such spin valve. Regardless of the different thickness of Ta (0–3 nm), a PSSW mode is excited in all samples. The demonstrated result indicates the potential application of spin valve structure in magnonic devices. Furthermore, the dependence of various parameters such as saturation magnetization Ms, effective magnetization Meff, interlayer exchange coupling strength (exchange constant) and Gilbert damping α on the thickness of Ta interlayer was also investigated.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

The authors thank the financial support from the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (RS-2023-00222519). This work was also supported by the National Natural Science Foundation of China (Grant No. 51601093, 51571121, 11604148 and 61427812), Fundamental Research Funds for the Central Universities (Grant No. 30916011345), the Natural Science Foundation of Jiangsu Province (Grant No. BK20160833 and BK20160831), the China Postdoctoral Science Foundation Funded Project (Grant No. 2015M571285, 2016M601811 and 2016M591851), the Postdoctoral Science Foundation Funded Project of Jiangsu Province (Grant No. 1601268 C), the Key Research & Development Program of Jiangsu Province (Grant No. BE2017102), and Special Fund for the transformation of scientific and technological achievements in Jiangsu Province (BA2017121).

Author information

Authors and Affiliations

  1. Department of Applied Physics, Integrated Education Institute for Frontier Science and Technology (BK21 Four) and Institute of Natural Sciences,, Kyung Hee University, Yongin, 17104, Korea

    Muhammad Arif & Jong Soo Rhyee

  2. MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People’s Republic of China

    Muhammad Arif, Zhang Xiang, Er Liu & Feng Xu

  3. Department of Physics, Ghazi National Institute of Engineering and Sciences (GNIES), Dera Ghazi Khan, Punjab, Pakistan

    Ishfaq Ahmad shah

Authors
  1. Muhammad Arif
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  2. Zhang Xiang
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  3. Ishfaq Ahmad shah
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  4. Jong Soo Rhyee
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  5. Er Liu
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  6. Feng Xu
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Contributions

Muhammad Arif: Material preparation, Data collection and analysis, Writing. Zhang Xiang: Review and Formal analysis, Ishfaq Ahmad Shah: Review and Formal analysis,  Jong Soo Rhyee: Revising and Editing, Formal analysis,  Er Liu: Conceptualization, Revising and Editing, Formal analysis, Project administration, Co-Supervision,  Feng Xu: Funding acquisition, Revising, Formal analysis, Project administration, Supervision.

Corresponding authors

Correspondence to Er Liu or Feng Xu.

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Arif, M., Xiang, Z., shah, I.A. et al. Manipulating the interlayer exchange coupling in CoFeB/Ta/CoFeB multilayered spin valve for magnonic applications. J Mater Sci: Mater Electron 35, 562 (2024). https://doi.org/10.1007/s10854-024-12301-4

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