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Microstructure, electrical properties and conductivity mechanism of BCZT epitaxial films deposited at different oxygen partial pressure by PLD

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Abstract

Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) ferroelectric epitaxial films deposited at different oxygen partial pressure were successfully obtained by pulsed laser deposition. The effects of oxygen partial pressure on the phase structure, microstructure, electrical properties and leakage mechanism were studied. The results showed that the BCZT epitaxial films have a smooth surface, uniform thickness, well integrated with substrate and no elemental segregation. BCZT epitaxial film with oxygen partial pressure of 15 Pa exhibited the optimal electrical properties (2Pr–22.48 µC/cm2, Jleak ∼ 1.42 × 10−3 A/cm2). The results of conduction mechanism fitting indicated that BCZT film conductivity mechanism followed the Ohmic mechanism at low electric fields, while it followed the Fowler–Nordheim tunneling mechanism at high electric fields.

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Funding

This work was supported by the Self-innovation Research Funding Project of Hanjiang Laboratory (Grant No. HJL202202A005) and State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology) (Grant No. 2022-KF-33).

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Correspondence to Chuanbin Wang.

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Ji, X., Peng, Q., Zhang, S. et al. Microstructure, electrical properties and conductivity mechanism of BCZT epitaxial films deposited at different oxygen partial pressure by PLD. J Mater Sci: Mater Electron 34, 1647 (2023). https://doi.org/10.1007/s10854-023-10994-7

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