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Improved thermoelectric performance of Se-doped n-type nanostructured Bi2Te3

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Abstract

Pure and Se-doped Bi2Te3 nanostructures are prepared by solvothermal method at 190 °C for 24 h. Rhombohedral crystal structures in both cases are confirmed by XRD. They possess nanoplate-like morphology. Carrier concentrations and carrier mobilities are measured using Hall effect measurement. The vibrational modes are obtained using Raman spectroscopy. The energy band gap of 1.58 eV is obtained for doped sample by Tauc plot. The prepared samples are porous as confirmed by FESEM and density measurement. Thermoelectric measurement proves that the power factor enhances from 0.65 to 0.89 mWm−1 K−2 at 385 K with Se doping of Bi2Te3. The total thermal conductivity (k) decreases from 0.39 to 0. W/mK at room temperature due to the formation of point defects and mass fluctuations between different atoms. As a result, figure of merit (ZT) for Bi2Te3 increases from 0.37 to 0.61 at 385 K with Se doping which is 64% higher than pure Bi2Te3.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

Abbreviations

h :

Planck’s constant

λ :

Wavelength

v :

Frequency

k B :

Boltzmann constant

ZT :

Figure of merit

S :

Seebeck Coefficient

σ :

Electrical Conductivity

k :

Total thermal conductivity

k latt :

Lattice thermal conductivity

k e :

Electrical thermal conductivity

n :

Carrier concentration

e :

Charge of electron

µ :

Carrier mobility

λ :

Wavelength

K :

Scherrer constant

θ :

Bragg’s angle

D :

Crystallite size

ε :

Lattice strain

∆ :

Stacking fault

ρ :

Dislocation density

ϕ :

Porosity

l :

Mean free path

β :

Full width at half maxima

α :

Absorption coefficient

m* :

Effective mass

L :

Lorenz number

Cv :

Specific heat capacity

v :

Phonon group velocity

T :

Absolute Temperature

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Acknowledgements

The authors acknowledge Dr. Sudhir Kumar Pandey, School of Engineering, Indian Institute of Technology, Mandi, INDIA for providing in-house developed facilities for thermoelectric measurements and Material Research Center, the National Institute of Technology, Jaipur, INDIA for Hall effect measurements.

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Authors and Affiliations

  1. Department of Physics, Guru Jambheshwar University of Science and Technology, Hisar, India

    Kavita Rani, Vivek Gupta &  Ranjeet

  2. School of Engineering, Indian Institute of Technology, Mandi, India

    Abhishek Pandey

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  1. Kavita Rani
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  2. Vivek Gupta
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Contributions

K contributed to synthesis, characterization, formal analysis, investigation, validation, and writing of the original draft; VG contributed to resources, visualization, conceptualization, methodology, supervision, and editing of the manuscript; R contributed to resources, conceptualization, supervision, and editing of the manuscript; AP contributed to methodology, characterization, and validation.

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Correspondence to Vivek Gupta.

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Rani, K., Gupta, V., Ranjeet et al. Improved thermoelectric performance of Se-doped n-type nanostructured Bi2Te3. J Mater Sci: Mater Electron 34, 1074 (2023). https://doi.org/10.1007/s10854-023-10490-y

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