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Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN

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Abstract

The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on n-Si substrate was deposited by a hydride vapor phase epitaxy (HVPE) technique. Au/Ti contact was thermally evaporated on AlN thin film. Thus, admittance measurements (Y = G + iωC) of the fabricated device were performed and analyzed for frequencies ranging from 1 to 1000 kHz and at room temperature. The C–V and G/ω–V characteristics shown a strong frequency dependence. This behavior is related to the interface traps changing with applied ac signal. In addition, the dielectric parameters, conductivity, and electric modulus of the device were extracted from capacitance and conductance data. The obtained results suggest that the prepared device can be used as a capacitor in electronic circuits.

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The data that support the findings of this study are available from the corresponding author on reasonable request.

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Funding

The work was supported Hitit University BAP office with the research Project Number FEF19004.15.010, FEF19002.15.001, FEF01.13.003.

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Authors and Affiliations

  1. Department of Physics, Faculty of Arts and Sciences, Hitit University, Çorum, Turkey

    D. E. Yıldız

  2. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    A. Tataroglu

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  1. D. E. Yıldız
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Contributions

DEY: Conceptualization, Writing—review & editing, Methodology, Visualization, Formal analysis, Data curation, Supervision. AT: Investigation, Formal analysis, Data curation, Funding acquisition, Supervision.

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Correspondence to D. E. Yıldız.

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Yıldız, D.E., Tataroglu, A. Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN. J Mater Sci: Mater Electron 34, 1057 (2023). https://doi.org/10.1007/s10854-023-10235-x

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