Abstract
As wearable pressure sensors have to interact with the external environment in practical application, the problem that ambient temperature changes in such environment usually interferes with sensor’s pressure measurement performance illustrates the importance of having wearable pressure sensors produce electrical signal independent of temperature. This study proposes a new design of a wearable anti-temperature interference pressure sensor with a near-zero temperature coefficient of resistance (TCR). The sensor is fabricated by a simple method of coating the reduced graphene oxide/Ag nanowires (rGO/Ag NWs) composite on the surface of the polydimethylsiloxane (PDMS) polymer film with ridge-like microstructures. The wearable anti-temperature interference pressure sensor yields a high sensitivity of − 1.58 kPa−1 in the pressure range of 0–400 Pa, a quick response time (25 ms), and a high durability (after 1000 loops). It can be applied to monitor a variety of human movements, including large movements such as finger and wrist bending, and fine movements such as swallowing and breathing, and is virtually insusceptible to temperature changes.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
References
K. Tian, G. Sui, P. Yang, H. Deng, Q. Fu, ACS Appl. Mater. Interfaces 12, 20998–21008 (2020). https://doi.org/10.1021/acsami.0c05618
W. Zhang, Y. Xiao, Y. Duan, N. Li, L. Wu, Y. Lou, H. Wang, Z. Peng, ACS Appl. Mater. Interfaces 12, 48938–48947 (2020). https://doi.org/10.1021/acsami.0c12369
H. Ervasti, T. Jarvinen, O. Pitkanen, E. Bozo, J. Hiitola-Keinanen, O.H. Huttunen, J. Hiltunen, K. Kordas, ACS Appl. Mater. Interfaces 13, 27284–27294 (2021). https://doi.org/10.1021/acsami.1c04397
M. Chen, K. Li, G. Cheng, K. He, W. Li, D. Zhang, W. Li, Y. Feng, L. Wei, W. Li, G. Zhong, C. Yang, ACS Appl. Mater. Interfaces 11, 2551–2558 (2019). https://doi.org/10.1021/acsami.8b20284
L. Sheng, Y. Liang, L. Jiang, Q. Wang, T. Wei, L. Qu, Z. Fan, Adv. Funct. Mater. 25, 6545–6551 (2015). https://doi.org/10.1002/adfm.201502960
J. Park, Y. Lee, M. Ha, S. Cho, H. Ko, J. Mater. Chem. B 4, 2999–3018 (2016). https://doi.org/10.1039/c5tb02483h
S. Pyo, J. Lee, K. Bae, S. Sim, J. Kim, Adv. Mater. 33, 2005902 (2021). https://doi.org/10.1002/adma.202005902
X. Pu, M. Liu, X. Chen, J. Sun, C. Du, Y. Zhang, J. Zhai, W. Hu, Z.L. Wang, Sci. Adv. (2017). https://doi.org/10.1126/sciadv.1700015
T.H. Chang, Y. Tian, C. Li, X. Gu, K. Li, H. Yang, P. Sanghani, C.M. Lim, H. Ren, P.Y. Chen, ACS Appl. Mater. Interfaces 11, 10226–10236 (2019). https://doi.org/10.1021/acsami.9b00166
X. Wu, Z. Li, H. Wang, J. Huang, J. Wang, S. Yang, J. Mater. Chem. C 7, 9008–9017 (2019). https://doi.org/10.1039/c9tc02575h
B. Zhu, Z. Niu, H. Wang, W.R. Leow, H. Wang, Y. Li, L. Zheng, J. Wei, F. Huo, X. Chen, Small 10, 3625–3631 (2014). https://doi.org/10.1002/smll.201401207
L. Cheng, R. Wang, X. Hao, G. Liu, Sensors 21, 289 (2021). https://doi.org/10.3390/s21010289
J. Zhang, L.J. Zhou, H.M. Zhang, Z.X. Zhao, S.L. Dong, S. Wei, J. Zhao, Z.L. Wang, B. Guo, P.A. Hu, Nanoscale 10, 7387–7395 (2018). https://doi.org/10.1039/c7nr09149d
H. Jing, L. Xu, X. Wang, Y. Liu, J. Hao, J. Mater. Chem. A 9, 19914–19921 (2021). https://doi.org/10.1039/d1ta02791c
G.Y. Bae, S.W. Pak, D. Kim, G. Lee, D.H. Kim, Y. Chung, K. Cho, Adv. Mater. 28, 5300–5306 (2016). https://doi.org/10.1002/adma.201600408
Y. Zhang, F. Han, Y. Hu, Y. Xiong, H. Gu, G. Zhang, P. Zhu, R. Sun, C.P. Wong, Macromol. Chem. Phys. 221, 2000073 (2020). https://doi.org/10.1002/macp.202000073
Y. Wang, J. Chen, D. Mei, Micromachines 10, 579 (2019). https://doi.org/10.3390/mi10090579
J. Park, Y. Lee, J. Hong, M. Ha, Y.D. Jung, H. Lim, S.Y. Kim, H. Ko, ACS Nano 8, 4689–4697 (2014). https://doi.org/10.1021/nn500441k
G. Lv, X. Hu, L. Hao, H. Tian, J. Shao, D. Yu, Ind. Eng. Chem. Res. 60, 314–323 (2021). https://doi.org/10.1021/acs.iecr.0c04908
L. Cheng, W. Qian, L. Wei, H. Zhang, T. Zhao, M. Li, A. Liu, H. Wu, J. Mater. Chem. C 8, 11525–11531 (2020). https://doi.org/10.1039/d0tc02539a
S. Zhang, C. Lin, Z. Xia, M. Chen, Y. Jia, B. Tao, S. Li, K. Cai, J. Mater. Chem. B 8, 8315–8322 (2020). https://doi.org/10.1039/d0tb00954g
W. Li, X. Jin, X. Han, Y. Li, W. Wang, T. Lin, Z. Zhu, ACS Appl. Mater. Interfaces 13, 19211–19220 (2021). https://doi.org/10.1021/acsami.0c22938
Q. Wang, S. Ling, X. Liang, H. Wang, H. Lu, Y. Zhang, Adv. Funct. Mater. 29, 1808695 (2019). https://doi.org/10.1002/adfm.201808695
Z. Gao, Z. Lou, W. Han, G. Shen, ACS Appl. Mater. Interfaces 12, 24339–24347 (2020). https://doi.org/10.1021/acsami.0c05119
A. Abodurexiti, C. Yang, X. Maimaitiyiming, Macromol. Mater. Eng. 305, 2000181 (2020). https://doi.org/10.1002/mame.202000181
Y. Zhang, Y. Zhao, W. Zhai, G. Zheng, Y. Ji, K. Dai, L. Mi, D. Zhang, C. Liu, C. Shen, Chem. Eng. J. 407, 127960 (2021). https://doi.org/10.1016/j.cej.2020.127960
L. Zhu, Y. Wang, D. Mei, W. Ding, C. Jiang, Y. Lu, ACS Appl. Mater. Interfaces 12, 31725–31737 (2020). https://doi.org/10.1021/acsami.0c09653
G.Y. Bae, J.T. Han, G. Lee, S. Lee, S.W. Kim, S. Park, J. Kwon, S. Jung, K. Cho, Adv. Mater. 30, 1803388 (2018). https://doi.org/10.1002/adma.201803388
K. Chu, S.C. Lee, S. Lee, D. Kim, C. Moon, S.H. Park, Nanoscale 7, 471–478 (2015). https://doi.org/10.1039/c4nr04489d
S. Nuthalapati, V. Shirhatti, V. Kedambaimoole, V. Pandi, H. Takao, M.M. Nayak, K. Rajanna, Sens. Actuators A Phys. 334, 113314 (2022). https://doi.org/10.1016/j.sna.2021.113314
R. Kapusta, H. Zhu, C. Lyden, IEEE J. Solid-State Circuits 49, 1694–1701 (2014). https://doi.org/10.1109/jssc.2014.2320465
C.M. Seck, P.J. Martin, E.C. Cook, B.C. Odom, D.A. Steck, Rev. Sci. Instrum. 87, 064703 (2016). https://doi.org/10.1063/1.4953330
Y.K. Choi, T. Park, D.H.D. Lee, J. Ahn, Y.H. Kim, S. Jeon, M.J. Han, S.J. Oh, Nanoscale 14, 8628–8639 (2022). https://doi.org/10.1039/d2nr02392j
H. Yao, P. Li, W. Cheng, W. Yang, Z. Yang, H.P.A. Ali, H. Guo, B.C.K. Tee, ACS Mater. Lett. 2, 986–992 (2020). https://doi.org/10.1021/acsmaterialslett.0c00160
W. He, G. Li, S. Zhang, Y. Wei, J. Wang, Q. Li, X. Zhang, ACS Nano 9, 4244–4251 (2015). https://doi.org/10.1021/acsnano.5b00626
Z. Gao, K. Jiang, Z. Lou, W. Han, G. Shen, J. Mater. Chem. C 7, 9648–9654 (2019). https://doi.org/10.1039/c9tc02832c
T. Someya, M. Amagai, Nat. Biotechnol. 37, 382–388 (2019). https://doi.org/10.1038/s41587-019-0079-1
A. Chortos, J. Liu, Z. Bao, Nat. Mater. 15, 937–950 (2016). https://doi.org/10.1038/nmat4671
R.S. Johansson, J.R. Flanagan, Nat. Rev. Neurosci. 10, 345–359 (2009). https://doi.org/10.1038/nrn2621
Y. Cheng, Y. Ma, L. Li, M. Zhu, Y. Yue, W. Liu, L. Wang, S. Jia, C. Li, T. Qi, J. Wang, Y. Gao, ACS Nano 14, 2145–2155 (2020). https://doi.org/10.1021/acsnano.9b08952
X. Tang, C. Wu, L. Gan, T. Zhang, T. Zhou, J. Huang, H. Wang, C. Xie, D. Zeng, Small 15, 1804559 (2019). https://doi.org/10.1002/smll.201804559
Y. Gao, G. Yu, J. Tan, F. Xuan, Sens. Actuators A Phys. 280, 205–209 (2018). https://doi.org/10.1016/j.sna.2018.07.048
B. Chen, L. Zhang, H. Li, X. Lai, X. Zeng, J. Colloid Interface Sci. 617, 478–488 (2022). https://doi.org/10.1016/j.jcis.2022.03.013
Q.J. Sun, X.H. Zhao, Y. Zhou, C.C. Yeung, W. Wu, S. Venkatesh, Z.X. Xu, J.J. Wylie, W.J. Li, V.A.L. Roy, Adv. Funct. Mater. 29, 1808829 (2019). https://doi.org/10.1002/adfm.201808829
A.K. Geim, K.S. Novoselov, Nat. Mater. 6, 183–191 (2007). https://doi.org/10.1038/nmat1849
S.J. Kim, K. Choi, B. Lee, Y. Kim, B.H. Hong, Annu. Rev. Mater. Res. 45, 63–84 (2015). https://doi.org/10.1146/annurev-matsci-070214-020901
L.J. Cote, J. Kim, V.C. Tung, J. Luo, F. Kim, J. Huang, Pure Appl. Chem. 83, 95–110 (2011). https://doi.org/10.1351/pac-con-10-10-25
S. Han, Q. Meng, A. Chand, S. Wang, X. Li, H. Kang, T. Liu, Polym. Test. 80, 106106 (2019). https://doi.org/10.1016/j.polymertesting.2019.106106
S.M. Shivaprasad, M.A. Angadi, L.A. Udachan, Thin Solid Films 71, L1–L4 (1980). https://doi.org/10.1016/0040-6090(80)90170-4
T. Park, H.K. Woo, B.K. Jung, B. Park, J. Bang, W. Kim, S. Jeon, J. Ahn, Y. Lee, Y.M. Lee, T.I. Kim, S.J. Oh, ACS Nano 15, 8120–8129 (2021). https://doi.org/10.1021/acsnano.0c09835
N. Bai, L. Wang, Q. Wang, J. Deng, Y. Wang, P. Lu, J. Huang, G. Li, Y. Zhang, J. Yang, K. Xie, X. Zhao, C.F. Guo, Nat. Commun. 11, 1–9 (2020). https://doi.org/10.1038/s41467-019-14054-9
Funding
This work was financially supported by Tianjin Applied Basic Research Multi-input Fund (21JCYBJC01560), Special project for intelligent robots (2022YFB4703505) and National Natural Science Foundation of China (52273145).
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All the authors have significantly contributed in this research work. YD performed material preparation, device fabrication, morphology characterization, data collection and analysis, and wrote the first draft of the manuscript. JC performed material preparation and provided assistance in the experiment. JZ and XY provided the test conditions. XY and XH reviewed and revised the manuscript and supervised the entire research work.
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Dong, Y., Chang, J., Zhao, J. et al. Wearable anti-temperature interference pressure sensor with ridge-like interlocking microstructures. J Mater Sci: Mater Electron 34, 835 (2023). https://doi.org/10.1007/s10854-023-10223-1
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DOI: https://doi.org/10.1007/s10854-023-10223-1