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Band gap tailoring and photosensitivity study of Al-doped SnO2 nanocrystallites prepared by sol–gel technique

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Abstract

Electrical, optical and photosensitivity of aluminium-doped tin oxide (Al-SnO2) nanocrystallites prepared by sol–gel technique and annealed at 400 °C and 500 °C are studied. The synthesized nanocrystallites are characterized using spectroscopic techniques such as powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, energy-dispersive X-ray spectroscopy (EDX) and UV–VIS-DRS spectroscopy. The PXRD data confirm the development of polycrystalline nanocrystallites having crystal size ≈ 6.8 nm at 400 °C which increases to ≈ 8.7 nm on annealing at 500 °C. SEM images illustrate the formation of nanoclusters. Broad characteristics bands of FTIR spectra demonstrate the presence of physical interaction between SnO2 and Al2O3. EDX spectra illustrate the presence of aluminium, tin and oxygen in the particles annealed at 400 °C and 500 °C with composition Sn0.726Al0.274O2 and Sn0.809Al0.191O2, respectively. UV–VIS-DRS spectroscopy illustrates that the band gap energy of 400 °C and 500 °C annealed materials are 3.42 and 3.35 eV, respectively. First time, the electrical properties and photosensitivity of the Al-SnO2 nanocrystallites annealed at two different temperatures are studied by making the particles into thin films of thickness 103µ (400 °C) and 106µ (500 °C) on glass substrate.

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  1. Department of Chemistry, Indira Gandhi Institute of Technology, Sarang, Dhenkanal, Odisha, 759146, India

    Binod Bihari Panda, Debakanta Tripathy & Niladri Maity

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  1. Binod Bihari Panda
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by BBP (binodgcek@gmail.com), DT (dtripathy579@gmail.com) and NM (niladriiitb@gail.com). The first draft of the manuscript was written by BBP, and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Binod Bihari Panda or Niladri Maity.

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Panda, B.B., Tripathy, D. & Maity, N. Band gap tailoring and photosensitivity study of Al-doped SnO2 nanocrystallites prepared by sol–gel technique. J Mater Sci: Mater Electron 33, 24559–24570 (2022). https://doi.org/10.1007/s10854-022-09167-9

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