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On I–V measurements and high field conduction of (Se80Te20)94−xGe6Bix (0 ≤ x ≤ 12) chalcogenide alloys

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Abstract

(Se80Te20)94−xGe6Bix (0 ≤ x ≤ 12) chalcogenide alloys were prepared by melt quenching technique. Current–voltage (I–V) measurements on pellets of the primed samples were taken in temperature range 293–313 K and voltage range 0–200 V for detailed analysis of DC conductivity and to elucidate the conduction mechanism of present chalcogenide system. DC conductivity is found to increase with Bi content. Further, the deduced values of pre-exponential factor and activation energy calculated using the temperature dependence of DC conductivity and show that conduction in the examined alloys is through thermally aided tunnelling of charge carriers among the localised states existing in band tails. The detailed investigation reveals that space charge limited conduction (SCLC) theory is not able to characterize the conduction process, since ln(I/V) versus V plots are essentially linear, despite the fact that the slope of these plots does not decrease linearly with temperature. The linear relationship between ln(I) and V1/2 in all investigated samples indicates either Poole–Frenkel or Schottky emission is involved in conduction process. Further analysis of results shows that Poole–Frenkel conduction mechanism is the best fit for describing the conduction. Mott’s variable range of hopping charge carriers model and temperature dependence of DC conductivity have been utilized to calculate various parameters such as degree of disorder, degree of localization, density of localized states at Fermi level, hopping distance and hopping energy.

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The data and materials were available. The experiential data will be available on reasonable request from the authors.

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Authors and Affiliations

  1. Department of Physics, Himachal Pradesh University Summerhill, Shimla, Himachal Pradesh, 171005, India

    Priyanka Vashist, Balbir Singh Patial & Nagesh Thakur

  2. Department of Physics, KDC Government College Jaisinghpur, Kangra, Himachal Pradesh, 176095, India

    Rakesh Sharma

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  1. Priyanka Vashist
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  2. Rakesh Sharma
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  3. Balbir Singh Patial
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  4. Nagesh Thakur
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Contributions

All authors contributed to the manuscript. Samples composition and characterizations of these samples were formulated by BSP. Samples preparation, data collection and analysis were performed by PV. The first draft of the manuscript was written by PV and all authors commented on previous versions of this manuscript. All authors read and approved the final manuscript.

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Correspondence to Balbir Singh Patial.

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Vashist, P., Sharma, R., Patial, B.S. et al. On I–V measurements and high field conduction of (Se80Te20)94−xGe6Bix (0 ≤ x ≤ 12) chalcogenide alloys. J Mater Sci: Mater Electron 33, 22821–22834 (2022). https://doi.org/10.1007/s10854-022-09049-0

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