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Dielectric relaxation in layer-structured SrBi2−xGdxNb2O9 (x = 0.0, 0.4, 0.6, and 0.8) lead-free ceramics

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Abstract

The gadolinium (Gd3+)-doped SrBi2Nb2O9 (SBN) ceramics with the chemical formula SrBi2−xGdxNb2O9 (x = 0.0, 0.4, 0.6, and 0.8) have been prepared through traditional solid-state sintering method. X-ray diffraction reveals a single-phase-layered perovskite structure for all compositions with shrinkage of the unit cell of SBN. The plate-like morphology revealed from SEM is symbolic of the characteristic Aurivillius phase of ceramics. Shifting of Raman phonon modes indicates the reduced rattling space of NbO6 octahedral with an increase in Gd concentration. The dielectric properties of all compositions are studied as a function of temperature (RT—500 °C) over the frequency range (50 Hz to 1 MHz). Softening the lowest frequency mode with increasing x in SBGN shows the transition from ferroelectric to paraelectric at room temperature (RT). The flattening of dielectric permittivity and low dielectric loss is observed in SBN and gadolinium-modified SBN (SBGN) ceramic samples at RT. The phase transition becomes diffused and transition temperature gets shifted from 430 to 330 °C with an increase in gadolinium concentration at higher frequencies. The increase in broadness with an increase in frequency suggests that the presentation materials are of ferroelectric relaxor type. The degree of relaxor behavior (γ) increases from 1.05 for x = 0.0 to 1.57 for x = 0.8. The relaxor behavior along with diffuseness was noticed in the fabricated ceramics.

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The authors declare that no funds, grants, or other support was received during the preparation of this manuscript.

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Authors and Affiliations

  1. Division of Physics, Department of Sciences & Humanities, VFSTR Deemed to be University, Guntur, 522213, India

    S. Nagamani, J. Nitchal Kiran & B. Nageswara Rao

  2. Department of Mechanical Engineering, KHIT, Guntur, 522019, India

    B. Siva Basivi Reddy

  3. Department of BS&H, VITS, Deshmukhi, Hyderabad, 508284, India

    J. Anindhya Kiran

  4. Department of Physics, Andhra University, Visakhapatnam, 530003, India

    K. Sambasiva Rao

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  1. S. Nagamani
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Contributions

All authors contributed to the study’s conception and design. Material preparation, data collection, and analysis were performed by [SN], [JAK], and BNR]. The first draft of the manuscript was written by [JNK], [BSBR], and [KSR], and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to J. Nitchal Kiran.

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Authors have no potential conflicts of interest. The present research involved no human and/or animal participants. The authors have no relevant financial or non-financial interests to disclose.

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Nagamani, S., Nitchal Kiran, J., Siva Basivi Reddy, B. et al. Dielectric relaxation in layer-structured SrBi2−xGdxNb2O9 (x = 0.0, 0.4, 0.6, and 0.8) lead-free ceramics. J Mater Sci: Mater Electron 33, 12997–13011 (2022). https://doi.org/10.1007/s10854-022-08241-6

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