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Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures

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Abstract

In this study, we report the fabrication of WSe2/SnSe2/WSe2 van der Waals (vdW) heterostructures for potential applications as tunnel field-effect transistors (TFETs), bipolar junction transistors (BJTs), diodes, and phototransistors. We performed morphological, electrical, and optoelectronic characterizations of both back-gated WSe2/SnSe2 TFETs and WSe2/SnSe2/WSe2 BJTs. The electrical characterization of the WSe2/SnSe2 vdW-based TFETs exhibited a trend of negative differential resistance originating from band-to-band tunneling. The WSe2/SnSe2 vdW-based photodiode showed maximum photoresponsivity in the TFET of approximately 65 AW-1 at a laser power and wavelength of 0.015 µW and 532 nm, respectively. The results support the application of WSe2, SnSe2, and their heterostructures in multifunctional two-dimensional nanoelectronic devices.

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Acknowledgements

This work was supported by the Brain Pool Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science and ICT (NRF-2019H1D3A1A01102658). This study was supported by a research fund from Chosun University (2021).

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  1. Department of Electrical Engineering, Chosun University, 375, Seosuk–dong, Dong–gu, Gwangju, 501- 759, Republic of Korea

    Abdelkader Abderrahmane, Changlim Woo & Pil Ju Ko

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  1. Abdelkader Abderrahmane
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Abderrahmane, A., Woo, C. & Ko, P.J. Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures. J Mater Sci: Mater Electron 33, 11841–11850 (2022). https://doi.org/10.1007/s10854-022-08147-3

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