Abstract
The compound CuGaSe2 (CGS) is a potential wide bandgap semiconductor as a top cell for tandem solar cells in combination with a Cu(In,Ga)Se2 or Si bottom cell. However, the traditional cadmium sulfide (CdS) buffer layer usually forms a “cliff” structure at the heterojunction interface with CGS film, which deteriorates device performance of solar cell obviously. Herein, the non-toxic and wide bandgap TiO2 is studied as the n-type buffer layer of CGS thin film solar cell using SCAPS simulation software. First of all, the impact of different buffer layer thicknesses on the heterojunction interface is investigated systematically. It is found that the TiO2 buffer layer can reduce the conduction band offset (CBO) between the absorber layer and the buffer layer to about 0.03 eV, which can induce the photo-generated electrons across the interface barrier easily, and thus resulting an increase in device performance obviously. Further investigations on carrier concentrations of the buffer layer indicate high quality TiO2 buffer layer should have a lower carrier concentration below 2 × 1017 cm−3. This study offers a promising buffer layer material for CGS.
Similar content being viewed by others
Data availability
The data that support the findings of this study are available on request from the corresponding author.
References
V. Bermudez, A. Perez-Rodriguez, Understanding the cell-to-module efficiency gap in Cu(In,Ga)(S,Se)2 photovoltaics scale-up. Nat Energy 3 (2018).
K. Yoshikawa, H. Kawasaki, W. Yoshida, T. Irie, K. Konishi, K. Nakano, T. Uto, D. Adachi, M. Kanematsu, H. Uzu, K. Yamamoto, Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%. Nat. Energy 2, 17032 (2017)
S.R. Tamalampudi, Y.Y. Lu, U.R. Kumar, R. Sankar, C.D. Liao, B.K. Moorthy, C.H. Cheng, F.C. Chou, Y.T. Chen, High performance and bendable few-layered InSe photodetectors with broad spectral response. Nano Lett 14, 2800–2806 (2014)
N. Liu, F. Xu, Y. Zhu, Y. Hu, G. Liu, L. Wu, K. Wu, S. Sun, F. Hong, Synthesis and characterization of (Cu1−xAgx)2ZnSnS4 nanoparticles with phase transition and bandgap tuning. J. Mater. Sci. 31, 5760–5768 (2020)
W. Witte, D. Abou-Ras, K. Albe, G.H. Bauer, F. Bertram, C. Boit, R. Brüggemann, J. Christen, J. Dietrich, A. Eicke, D. Hariskos, M. Maiberg, R. Mainz, M. Meessen, M. Müller, O. Neumann, T. Orgis, S. Paetel, J. Pohl, H. Rodriguez-Alvarez, R. Scheer, H.-W. Schock, T. Unold, A. Weber, M. Powalla, Gallium gradients in Cu(In, Ga)Se2 thin-film solar cells. Prog. Photovolt. Res. Appl. 23, 717–733 (2015)
W.N. Shafarman, R. Klenk, B.E. McCandless, Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap. J. Appl. Phys. 79, 7324–7328 (1996)
N. Bandaru, E. Panda, Influence of CIGS film thickness on the microstructure, bulk optoelectronic, and surface electrical properties. J. Mater. Sci. 32, 28618–28632 (2021)
S.V. Desarada, P.U. Londhe, S. Chaure, N.B. Chaure, CuInGaSe2 (CIGS) thin film on flexible Mo substrates from non-aqueous one-step electrodeposition process. J. Mater. Sci. (2021).
M. Nakamura, K. Yamaguchi, Y. Kimoto, Y. Yasaki, T. Kato, H. Sugimoto, Cd-Free Cu(In, Ga)(Se, S)2 thin-film solar cell with record efficiency of 23.35%. IEEE J. Photovolt. 9, 1863–1867 (2019)
M.A. Contreras, L.M. Mansfield, B. Egaas, J. Li, M. Romero, R. Noufi, E. Rudiger-Voigt, W. Mannstadt, Wide bandgap Cu(In, Ga)Se2 solar cells with improved energy conversion efficiency. Prog. Photovolt. Res. Appl. 20, 843–850 (2012)
W. Li, W. Li, Y. Feng, C. Yang, Numerical analysis of the back interface for high efficiency wide band gap chalcopyrite solar cells. Sol. Energy 180, 207–215 (2019)
M. Gloeckler, J.R. Sites, Efficiency limitations for wide-band-gap chalcopyrite solar cells. Thin Solid Films 480–481, 241–245 (2005)
Y. Zhang, S. Lin, S. Cheng, Z. He, Z. Hu, Z. Zhou, W. Liu, Y. Sun, Boosting Cu(In, Ga)Se2 thin film growth in low-temperature rapid-deposition processes: an improved design for the single-heating Knudsen effusion cell. Engineering 7, 534–541 (2021)
Y. Zhang, S. Lin, Z. Hu, S. Cheng, Z. He, Z. Zhou, S. Sun, W. Liu, Y. Sun, Towards an optimized gallium gradient for Cu(In, Ga)Se2 thin film via an improved constant low-temperature deposition process. Sol. Energy Mater. Sol. Cells 209, 110425 (2020)
S. Siebentritt, E. Avancini, M. Bär, J. Bombsch, E. Bourgeois, S. Buecheler, R. Carron, C. Castro, S. Duguay, R. Félix, E. Handick, D. Hariskos, V. Havu, P. Jackson, H.-P. Komsa, T. Kunze, M. Malitckaya, R. Menozzi, M. Nesladek, N. Nicoara, M. Puska, M. Raghuwanshi, P. Pareige, S. Sadewasser, G. Sozzi, A.N. Tiwari, S. Ueda, A. Vilalta-Clemente, T.P. Weiss, F. Werner, R.G. Wilks, W. Witte, M.H. Wolter, Heavy alkali treatment of Cu(In, Ga)Se2 solar cells: surface versus bulk effects. Adv. Energy Mater. 10, 1903752 (2020)
Y. Zhang, Z. Hu, S. Lin, C. Wang, S. Cheng, Z. He, Z. Zhou, Y. Sun, W. Liu, Silver surface treatment of Cu(In, Ga)Se2 (CIGS) thin film: a new passivation process for the CdS/CIGS heterojunction interface. Solar RRL 4, 2000290 (2020)
J. Gong, Y. Kong, J. Li, K. Wang, X. Wang, Z. Zhang, Z. Ding, X. Xiao, Enhancing photocurrent of Cu(In, Ga)Se2 solar cells with actively controlled Ga grading in the absorber layer. Nano Energy 62, 205–211 (2019)
J. Chantana, D. Hironiwa, T. Watanabe, S. Teraji, K. Kawamura, T. Minemoto, Controlled back slope of Ga/(In+Ga) profile in Cu(In, Ga)Se2 absorber fabricated by multi layer precursor method for improvement of its photovoltaic performance. Sol. Energy Mater. Sol. Cells 133, 223–228 (2015)
Y. Liu, B. Li, S. Lin, W. Liu, J. Adam, M. Madsen, H.-G. Rubahn, Y. Sun, Numerical analysis on effects of experimental Ga grading on Cu(In, Ga)Se2 solar cell performance. J. Phys. Chem. Solids 120, 190–196 (2018)
A. Aissat, H. Arbouz, J.P. Vilcot, Optimization and improvement of a front graded bandgap CuInGaSe2 solar cell. Sol. Energy Mater. Sol. Cells 180, 381–385 (2018)
A. Sharan, F.P. Sabino, A. Janotti, N. Gaillard, T. Ogitsu, J.B. Varley, Assessing the roles of Cu- and Ag-deficient layers in chalcopyrite-based solar cells through first principles calculations. J. Appl. Phys. 127, 065303 (2020)
N. Valdes, J. Lee, W. Shafarman, Comparison of Ag and Ga alloying in low bandgap CuInSe2-based solar cells. Sol. Energy Mater. Sol. Cells 195, 155–159 (2019)
V. Achard, M. Balestrieri, S. Béchu, M. Bouttemy, M. Jubault, T. Hildebrandt, L. Lombez, N. Naghavi, A. Etcheberry, D. Lincot, F. Donsanti, Study of gallium front grading at low deposition temperature on polyimide substrates and impacts on the solar cell properties. IEEE J. Photovolt. 1–6 (2018).
J. Chantana, T. Watanabe, S. Teraji, T. Minemoto, Influence of minimum position in [Ga]/([Ga]+[In]) profile of Cu(In, Ga)Se 2 on flexible stainless steel substrate on its photovoltaic performances. Sol. Energy Mater. Sol. Cells 157, 750–756 (2016)
X. Zhang, Z.K. Yuan, S. Chen, Low electron carrier concentration near the p-n junction interface: a fundamental factor limiting short-circuit current of Cu(In, Ga)Se2 solar cells. Sol. RRL 3, 1900057 (2019)
Y. Zhao, S. Yuan, D. Kou, Z. Zhou, X. Wang, H. Xiao, Y. Deng, C. Cui, Q. Chang, S. Wu, High efficiency CIGS solar cells by bulk defect passivation through Ag substituting strategy. ACS Appl. Mater. Interfaces. 12, 12717–12726 (2020)
M. Ballabio, D. Fuertes Marron, N. Barreau, M. Bonn, E. Canovas, composition-dependent passivation efficiency at the CdS/CuIn1 − xGaxSe2 interface, Adv. Mater. e1907763 (2020).
R. Scheer, Activation energy of heterojunction diode currents in the limit of interface recombination. J. Appl. Phys. 105, 104505 (2009)
W. Hsu, C.M. Sutter-Fella, M. Hettick, L. Cheng, S. Chan, Y. Chen, Y. Zeng, M. Zheng, H.P. Wang, C.C. Chiang, A. Javey, Electron-selective TiO2 contact for Cu(In, Ga)Se2 solar cells. Sci. Rep. 5, 16028 (2015)
T.-M. Cheng, C.-H. Cai, W.-C. Huang, W.-L. Xu, L.-H. Tu, C.-H. Lai, Efficiency enhancement of Cu(In, Ga)(S, Se)2 solar cells by indium-doped CdS buffer layers. ACS Appl. Mater. Interfaces. 12, 18157–18164 (2020)
J. Keller, L. Stolt, K.V. Sopiha, J.K. Larsen, L. Riekehr, M. Edoff, On the paramount role of absorber stoichiometry in (Ag, Cu)(In, Ga)Se2 wide-gap solar cells. Sol. RRL 4, 2000508 (2020)
T. Nietzold, N. Valdes, M.E. Stuckelberger, M. Chiu, T. Walker, A.M. Jeffries, A. Sinha, L.T. Schelhas, B. Lai, W.N. Shafarman, M.I. Bertoni, Role of cation ordering on device performance in (Ag, Cu)InSe2 solar cells with KF post-deposition treatment. ACS Appl. Energy Mater. 4, 233–241 (2021)
A. Chirila, S. Buecheler, F. Pianezzi, P. Bloesch, C. Gretener, A.R. Uhl, C. Fella, L. Kranz, J. Perrenoud, S. Seyrling, R. Verma, S. Nishiwaki, Y.E. Romanyuk, G. Bilger, A.N. Tiwari, Highly efficient Cu(In, Ga)Se2 solar cells grown on flexible polymer films. Nat. Mater. 10, 857–861 (2011)
J. Löckinger, S. Nishiwaki, T.P. Weiss, B. Bissig, Y.E. Romanyuk, S. Buecheler, A.N. Tiwari, TiO2 as intermediate buffer layer in Cu(In, Ga)Se2 solar cells. Sol. Energy Mater. Sol. Cells 174, 397–404 (2018)
S. Ishizuka, Impact of Cu-deficient p-n heterointerface in CuGaSe2 photovoltaic devices. Appl. Phys. Lett. 118, 133901 (2021)
Y. Zhang, Y. Zhang, X. Chen, S. Wang, Q. Gao, M. Wu, Z. Wang, J. Ao, Y. Sun, W. Liu, Q. Zhang, Ammonia-induced surface microstructure reconstruction on ACIGS thin film at room temperature. Mater. Sci. Semicond. Process. 140, 106380 (2022)
N.E.I. Boukortt, S. Patanè, M. Adouane, R. AlHammadi, Numerical optimization of ultrathin CIGS solar cells with rear surface passivation. Sol. Energy 220, 590–597 (2021)
H. Heriche, Z. Rouabah, N. Bouarissa, New ultra thin CIGS structure solar cells using SCAPS simulation program. Int. J. Hydrogen Energy 42, 9524–9532 (2017)
A. Chihi, M.F. Boujmil, B. Bessais, Investigation on the performance of CIGS/TiO2 heterojunction using SCAPS software for highly efficient solar cells. J. Electron. Mater. 46, 5270–5277 (2017)
Y. Zhang, L. Shi, Z. Wang, H. Dai, Z. Hu, S. Zhou, H. Chen, X. Feng, J. Zhu, Y. Sun, W. Liu, Q. Zhang, Silver-assisted optimization of band gap gradient structure of Cu(In, Ga)Se2 solar cells via SCAPS. Sol. Energy 227, 334–342 (2021)
S. Tripathi, P. Sadanand, D.K. Lohia, Dwivedi, Contribution to sustainable and environmental friendly non-toxic CZTS solar cell with an innovative hybrid buffer layer. Sol. Energy 204, 748–760 (2020)
P.K. Sadanand, S. Singh, P. Rai, D.K. Lohia, Dwivedi, Comparative study of the CZTS, CuSbS2 and CuSbSe2 solar photovoltaic cell with an earth-abundant non-toxic buffer layer. Sol. Energy 222, 175–185 (2021)
T. Umehara, F.A.B.M. Zulkifly, K. Nakada, A. Yamada, Conduction band offset engineering in wide-bandgap Ag(In, Ga)Se2 solar cells by hybrid buffer layer. Jpn. J. Appl. Phys. 56, 08MC09 (2017)
T.-Y. Lin, I. Khatri, J. Matsuura, K. Shudo, W.-C. Huang, M. Sugiyama, C.-H. Lai, T. Nakada, Alkali-induced grain boundary reconstruction on Cu(In, Ga)Se2 thin film solar cells using cesium fluoride post deposition treatment. Nano Energy 68, 104299 (2020)
D.-H. Cho, W.-J. Lee, M.E. Kim, K. Kim, J.H. Yun, Y.-D. Chung, Reactively sputtered Zn(O, S) buffer layers for controlling band alignment of Cu(In, Ga)Se2 thin-film solar cell interface. J. Alloys Compd. 842, 155986 (2020)
Acknowledgements
The authors gratefully acknowledge Dr. Marc Burgelman, University of Gent, Belgium, for providing the SCAPS simulation software.
Author information
Authors and Affiliations
Contributions
XL: conceptualization, methodology, investigation, writing—original draft. YH: writing—review and editing, resources.
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Ethical approval
This article does not contain any studies with human participants or animals performed by any of the authors.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Liu, X., Hu, Y. Investigation of TiO2 as the buffer layer in wide bandgap chalcopyrite solar cells using SCAPS. J Mater Sci: Mater Electron 33, 6253–6261 (2022). https://doi.org/10.1007/s10854-022-07799-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-022-07799-5