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Influence of thickness on the resistivity and infrared emissivity of TiN films

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Abstract

TiN films with low infrared emissivity were obtained using reactive magnetron sputtering. The influence of deposited thickness (309, 645, 1248, and 2011 nm) on the preferred orientation, morphology, structure, resistivity, and infrared emissivity of TiN films was studied. The resistivity and infrared emissivity of TiN films could be altered by varying the deposited thickness. Film with thickness of 645 nm showed (200) preferred orientation. Due to internal stress, the preferred orientation converted to (111) and (220) plane when the film thicknesses were 1248 and 2011 nm. The crystallization was poor and the grain size was small when the deposited thickness was 309 nm, resulting in high resistivity and infrared emissivity. The crystalline grains with preferred orientation of (200) plane of TiN films showed a closely arranged cellular morphology, while the crystalline grain morphology with (111) and (220) preferred orientation showed a mixture structure of triangular cone and prism. TiN film with (200) preferred orientation had higher density and smaller roughness than that with (111) and (220) preferred orientation, which was beneficial for low-resistivity and low-emissivity properties. It is concluded that TiN film with (200) preferred orientation has lower resistivity and infrared emissivity than that with (111) and (220) preferred orientation. When the deposited thickness of TiN films reaches 1248 nm, the thickness inhibition occurred and the change of the resistivity and infrared emissivity was not obvious.

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Authors and Affiliations

  1. Xi’an ChengXin Petro-Chemical Electric&Machinery Co. Ltd, Xi’an, 712100, Shaanxi, China

    Chunguang Li & Demin Jian

  2. Xi’an University of Technology, Xi’an, 710048, Shaanxi, China

    Qinggong Jia

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  1. Chunguang Li
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CL: Conceptualization, methodology, writing—original draft preparation. QJ: Data curation, software. DJ: Supervision, validation.

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Correspondence to Chunguang Li or Qinggong Jia.

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Li, C., Jia, Q. & Jian, D. Influence of thickness on the resistivity and infrared emissivity of TiN films. J Mater Sci: Mater Electron 33, 3606–3616 (2022). https://doi.org/10.1007/s10854-021-07554-2

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