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Influences of Co2+ doping on Ba3(VO4)2 ceramic with low dielectric constant, low sintering temperature, high Q*f and positive τf

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Abstract

The dielectric properties and sintering behavior of cobalt-doped Ba3(VO4)2 microwave dielectric ceramic prepared by the traditional solid-state reaction method were systematic researched. The phase structure and grain morphology of the ceramics were studied by XRD and SEM analysis. Densification temperature of cobalt-doped Ba3(VO4)2 was successfully decreased from 1100 to 925 °C. The second-phase Ba2V2O7 was formed as x = 0.05, and the second phase gradually increased as x increased. Electro-magnetic testing results show that the dielectric constant and bulk density were gradually falling with x increased, the Q*f value of ceramic has been improved, and the peak of Q*f obtained is x = 0.3 sintered at 925 °C. The optimal dielectric properties are εr = 13.2, Q*f = 54,063 GHz at 10.6 GHz and τf = + 18.7 ppm/°C, sintered at 925 °C, which may be widely used in adjustment of τf for LTCC ceramics with negative τf while maintaining excellent performances.

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Acknowledgements

This work was supported by the Sichuan Science and Technology Program (Grant No. 2021JDTD0026), Jiangxi Innovative Talent Program, and Jiangxi Guochuang & UESTC Joint R & D Center Program (Grant No. H04W190371).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Xin Yang, Yuanxun Li, Rui Peng, Yongcheng Lu & Hua Su

  2. College of Communication Engineering, Chengdu University of Information Technology, Chengdu, 610225, China

    Weiwei Ling

  3. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, China

    Yuanxun Li

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  1. Xin Yang
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  2. Yuanxun Li
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  3. Rui Peng
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Correspondence to Yuanxun Li or Weiwei Ling.

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Yang, X., Li, Y., Peng, R. et al. Influences of Co2+ doping on Ba3(VO4)2 ceramic with low dielectric constant, low sintering temperature, high Q*f and positive τf. J Mater Sci: Mater Electron 32, 19511–19518 (2021). https://doi.org/10.1007/s10854-021-06469-2

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  • DOI: https://doi.org/10.1007/s10854-021-06469-2

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