Abstract
Thermoelectric devices based on Seebeck and Peltier effects have attracted attention as a potential green technology. Mg3Sb2 is a promising high-performance thermoelectric material. In this work, Mg3Sb2 polycrystalline thin films were prepared on glass substrates through radio frequency magnetron sputtering using a composite target with Sb chips on an Mg disk plate. Moreover, the dependence on the substrate temperature (Ts) was investigated in the temperature range of room temperature to 773 K. The microstructure of Mg–Sb thin films, including the Mg/Sb chemical composition ratio, constituent phases, and grain size, was considerably affected by the target composition and Ts. Mg3Sb2 exhibited two crystalline phases, cubic and hexagonal. Cubic Mg3Sb2 functioned as a semiconductor with a band gap of 1.92 eV, larger than the reported value of 0.4–0.8 eV for the hexagonal phase. In contrast, the hexagonal Mg3Sb2 thin films exhibited p-type semiconductor properties. The electrical resistivity and Seebeck coefficient were strongly dependent on Ts. At Ts = 773 K, the maximum thermoelectric power factor of 1.29 μW/cm K2 was attained at 670 K.
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Acknowledgements
This research was partially supported by Grants-in-Aid for Scientific Research (C) (Nos. 18K04791 and 21K04718) from the Ministry of Education, Sports, and Culture, Science and Technology (MEXT), Japan.
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Tani, Ji., Ishikawa, H. Fabrication of Mg3Sb2 thin films via radio-frequency magnetron sputtering and analysis of the corresponding electrical properties. J Mater Sci: Mater Electron 32, 19499–19510 (2021). https://doi.org/10.1007/s10854-021-06468-3
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DOI: https://doi.org/10.1007/s10854-021-06468-3