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Exploring illumination effect on the impedance spectroscopy and dielectric dispersion of 5, 10, 15, 20-tetrakis(4-methoxyphenyl)-21H, 23H-porphine cobalt(II)/silicon heterojunction photovoltaic

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Abstract

The dynamic properties of a hybrid heterojunction based on a small molecule of 5, 10, 15, 20-tetrakis (4-methoxyphenyl)-21H, 23H-porphine cobalt(II), CoTMPP, grown onto p-Si wafer have been studied using impedance spectroscopy (IS) at various frequency range (102–106 Hz) under different illumination intensities (0–24 mW/cm2) at room temperature. The fabricated Al/p-Si/CoTMPP/Au heterojunction performs two relaxation processes associated with Al/p-Si and p-Si/CoTMPP interfaces are attributed to a Maxwell–Wagner–Sillars (MWS) effect causes charge accumulation at interfacial regions. With increasing illumination intensity, the MWS effect enhances and leads to more accumulated charges at the interfacial regions. Based on Nyquist plots fitting, the equivalent circuit of the fabricated device was modeled. The dielectric dispersion, electric modulus, relaxation process and electrical conductivity were investigated under different illuminations. The present results revealed an excellent photoresponse and photo-resistive of the Al/p-Si/CoTMPP/Au device as a candidate for photovoltaic devices and optoelectronics applications.

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Author notes

  1. M. M. Makhlouf and M. M. Shehata have contributed equally to this work.

Authors and Affiliations

  1. Department of Sciences and Technology, Rania University College, Taif University, Rania, 12975, Saudi Arabia

    M. M. Makhlouf

  2. Department of Physics, Faculty of Science, Minia University, Minia, 61519, Egypt

    M. M. Shehata

Authors
  1. M. M. Makhlouf
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  2. M. M. Shehata
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Correspondence to M. M. Makhlouf or M. M. Shehata.

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Makhlouf, M.M., Shehata, M.M. Exploring illumination effect on the impedance spectroscopy and dielectric dispersion of 5, 10, 15, 20-tetrakis(4-methoxyphenyl)-21H, 23H-porphine cobalt(II)/silicon heterojunction photovoltaic. J Mater Sci: Mater Electron 31, 13970–13978 (2020). https://doi.org/10.1007/s10854-020-03956-w

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  • DOI: https://doi.org/10.1007/s10854-020-03956-w

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