Abstract
In this work, Ti3C2Tx MXenes were fabricated by using HF solution for diverse etching time and then investigated as electromagnetic (EM) wave absorbing materials in the centimetre-band (2–18 GHz). Besides, the impact of etching time on the structure, morphology, surface termination and dielectric properties was explored. With growing etching time, the crystal structure and surface morphology of Ti3C2Tx MXenes were gradually destroyed and more C was exposed. Among the etching samples, Ti3C2Tx-24 exhibited optimal RLmin of − 42.5 dB and broad tunable absorption bandwidth of 13.8 GHz. The extraordinary absorption could be attributed to multiple reflections and scatterings and interfacial polarizations. More importantly, comprehensive comparisons were made among two-dimensional Ti3C2Tx MXenes, typical two-dimensional carbon-related and MoS2 materials. The thorough explorations supplement and improve the study of dielectric properties and EM wave absorption performance of Ti3C2Tx MXenes in centimetre-band, thus broadband Ti3C2Tx based hybrids absorbers can be constructed reasonably and effectively.
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Acknowledgements
This work was financially funded by the National Nature Science Foundation of China (51673040, 21676056 and 21376051), the Natural Science Foundation of Jiangsu Province (BK20171357), the Prospective Joint Research Project of Jiangsu Province (BY2016076-01), the Fundamental Research Funds for the Central Universities (2242015k30001), Scientific Innovation Research Foundation of College Graduate in Jiangsu Province (KYLX16_0266), a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) (1107047002), Fund Project for Transformation of Scientific and Technological Achievements of Jiangsu Province of China (BA2016105). The authors greatly acknowledge Prof. He Jianping Group’s much help with VNA test of Nanjing University of Aeronautics and Astronautics.
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Tong, Y., He, M., Zhou, Y. et al. Electromagnetic wave absorption properties in the centimetre-band of Ti3C2Tx MXenes with diverse etching time. J Mater Sci: Mater Electron 29, 8078–8088 (2018). https://doi.org/10.1007/s10854-018-8814-9
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DOI: https://doi.org/10.1007/s10854-018-8814-9