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Effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties for sol–gel grown MoS2/Si nanowire/Si devices

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Abstract

The effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties of a MoS2/Si nanowire (SiNW)/n-Si device are studied. The MoS2 thin films are prepared using the sol–gel method. The thermionic emission–diffusion model is the dominant process in the MoS2/SiNW/n-Si device when there is no H2O2 treatment. However, carrier transport in MoS2/SiNW/n-Si devices that are subject to H2O2 treatment is dominated by thermionic emission, so it demonstrates reliable rectification. Passivation of the SiNW surface increases the responsivity to solar irradiation. There is a low trap density at the MoS2/SiNW interfaces so the increase in photocurrent density for the MoS2/SiNW/n-Si device that is subject to H2O2 treatment is due to greater internal power conversion efficiency. The photo-response results for MoS2/SiNW/n-Si devices that are subject to (are not subject to) H2O2 treatment confirm that the decay in the photocurrent is due to the dominance of long-lifetime (short-lifetime) charge trapping. MoS2/SiNW/n-Si devices that are subject to H2O2 treatment exhibit reliable responsivity to solar irradiation.

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Acknowledgements

The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 106-2112-M-018-001-MY3) in the form of grants.

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Authors and Affiliations

  1. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Cheng-You Wu & Yow-Jon Lin

  2. Department of Automatic Control Engineering, Feng Chia University, Taichung, 407, Taiwan

    Hsing-Cheng Chang

  3. Precision Instrument Support Center, Feng Chia University, Taichung, 407, Taiwan

    Ya-Hui Chen

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  1. Cheng-You Wu
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Wu, CY., Lin, YJ., Chang, HC. et al. Effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties for sol–gel grown MoS2/Si nanowire/Si devices. J Mater Sci: Mater Electron 29, 6032–6039 (2018). https://doi.org/10.1007/s10854-018-8577-3

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