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Enhanced recoverable energy storage density of Mn-doped Ba0.4Sr0.6TiO3 thin films prepared by spin-coating technique

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Abstract

Mn-doped barium strontium titanate Ba0.4Sr0.6TiO3-x mol%Mn (x = 0, 1, 3 and 5; BSTMx) thin films were deposited on Pt/Ti/SiO2/Si(100) substrates by spin-coating and annealed at 800 °C. X-ray diffraction patterns revealed that all the thin films were a typical cubic perovskite structure and no impurity peaks were observed. The effect of Mn doping on the ferroelectric properties and energy storage performance of the samples was investigated. The results showed that the recoverable energy storage density Urec and the difference ∆P(Pmax − Pr) between maximum polarization Pmax and remnant polarization Pr firstly increased, then decreased with the increase of Mn doping amount. The optimized energy storage performance was obtained in Pt/BSTM3/Pt thin films: energy storage density of 8.48 J/cm3 and energy storage efficiency of 42.4% at 1.63 MV/cm, electrical resistivity of 4.19 × 1010 Ω cm and leakage current density of 7.77 × 10−6 A/cm2 at 163 kV/cm. Moreover, the effect of different top electrodes on energy storage performance was studied, which displayed that the energy density of Au/BSTM3/Pt films was higher than that of Pt/BSTM3/Pt films. The results indicated that Mn doping and Au electrodes could be effective ways to improve the energy storage properties of BST thin films.

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Acknowledgements

This work was supported by the National Key Basic Research Program of China (973 Program) (No. 2015CB654601), NSFC-Guangdong Joint Funds of the Natural Science Foundation of China (No. U1601209), Natural Science Foundation of China (No. 51372191), International Science and Technology Cooperation Program of China (No. 2011DFA52680) and Open Project of Key Laboratory of New Electric Functional Materials of Guangxi Colleges and Universities (No. DGN201505).

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Diao, C., Liu, H., Hao, H. et al. Enhanced recoverable energy storage density of Mn-doped Ba0.4Sr0.6TiO3 thin films prepared by spin-coating technique. J Mater Sci: Mater Electron 29, 5814–5819 (2018). https://doi.org/10.1007/s10854-018-8553-y

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