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Superior dielectric tunability of high-valence W6+-doped Na0.5Bi0.5TiO3 thin films

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Abstract

Na0.5Bi0.5TiO3 (NBT) and Na0.5Bi0.5Ti1−x W x O3+δ (NBTW x , x = 0.005, 0.010, 0.020) thin films were successfully fabricated on indium tin oxide (ITO)/glass substrates via a modified sol–gel method annealed at 600 °C. The effects of W6+ doping content on crystalline structure, surface morphology and electrical properties were studied in detail. All the films can be crystallized into phase-pure perovskite structures and possess smooth surfaces without any cracks. Compared with the NBT, each NBTW x thin film exhibits an obvious decrease of leakage current density and enhanced dielectric properties. A large dielectric tunability (62 %) which is comparable to that of lead-based ones (such as PZT) is achieved in NBTW0.010 sample at the frequency of 100 kHz, which can be attributed to the inhibition effect of the appropriate concentration of W6+ on the formation of oxygen vacancies. These results suggest that high-valence-ion substitution of W6+ ion for Ti4+ ion can significantly optimize the electrical properties of NBT-based thin films.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (No. 51002064) and the Scientific Research Foundation of University of Jinan (XKY1505).

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Authors and Affiliations

  1. School of Material Science and Engineering, University of Jinan, Jinan, 250022, China

    Xiaomei Jiang, Panpan Lv, Qian Yao & Jiahong Song

  2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan, 250022, China

    Changhong Yang

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  1. Xiaomei Jiang
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  2. Changhong Yang
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Correspondence to Changhong Yang.

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Jiang, X., Yang, C., Lv, P. et al. Superior dielectric tunability of high-valence W6+-doped Na0.5Bi0.5TiO3 thin films. J Mater Sci: Mater Electron 28, 1433–1437 (2017). https://doi.org/10.1007/s10854-016-5678-8

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