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Microstructures and dielectric properties of low permittivity SrCuSi4O10-Bi2O3 ceramics for LTCC applications

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Abstract

This paper reports the effect of Bi2O3 addition as a sintering aid to lower the sintering temperature of SrCuSi4O10 ceramics, as well as the sintering behavior, microstructure, phase evolution and dielectric properties of SrCuSi4O10 ceramics were investigated. The Bi2O3 addition significantly reduced the sintering temperature of SrCuSi4O10 ceramics from 1100 to 950 °C. Small amount of Bi2O3 addition could promote the densification of SrCuSi4O10 ceramics. However, excessive Bi2O3 addition caused the abnormal grain growth, leading to deteriorate dielectric properties. The τε constantly shifted towards the positive direction with increasing the amount of Bi2O3 additions. The SrCuSi4O10 ceramics with 3.0 wt% Bi2O3 addition sintered at 950 °C for 6 h showed excellent dielectric properties: εr ~ 6.26, tanδ = 3.1 × 10−3 and τε value of 122.90 ppm/°C.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 61671323) and Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education (Tianjin University).

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Authors and Affiliations

  1. School of Electronic and Information Engineering and Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin, 300072, China

    Ping Zhang, Jianwen Liao, Yonggui Zhao, Hui Xie, Lu Liu & Mi Xiao

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  1. Ping Zhang
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  2. Jianwen Liao
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  3. Yonggui Zhao
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  4. Hui Xie
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  5. Lu Liu
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  6. Mi Xiao
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Correspondence to Ping Zhang or Mi Xiao.

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Zhang, P., Liao, J., Zhao, Y. et al. Microstructures and dielectric properties of low permittivity SrCuSi4O10-Bi2O3 ceramics for LTCC applications. J Mater Sci: Mater Electron 28, 4946–4950 (2017). https://doi.org/10.1007/s10854-016-6146-1

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  • DOI: https://doi.org/10.1007/s10854-016-6146-1

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