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Thin films of AgIn5(S/Se)8 prepared in a two stage process

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Abstract

AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8−xSex alloy was achievable through the post-deposition treatment at 350 and 400 °C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value E g for the films was found to be as the order of 1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of 6.6 × 10−6 (Ω cm)−1 and thermoelectric power of +18 µV/K.

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Acknowledgments

We acknowledge the financial support of CONACYT through Project 229711, CONACYT-LIFYCS-123122 and CeMIE-Sol project 35 for using SEM and XRD. The authors strongly appreciate the technical assistance of Patricia Altuzar Coello and Oscar Gómez Daza from IER-UNAM, for XRD measurements and technical assistance, respectively. Student Adriana Gómez was involved in sample preparation.

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Authors and Affiliations

  1. Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63155, Tepic, Nayarit, Mexico

    Sarah Messina, Y. Rodríguez-Lazcano & E. Barrios-Salgado

  2. Instituto de Energías Renovables, Universidad Nacional Autónoma de México, C.P. 62580, Temixco, Morelos, Mexico

    J. Campos

  3. Facultad de Ciencias Químicas, Universidad Autónoma de Nuevo León, Av. Universidad S/N Ciudad Universitaria, C.P. 66451, San Nicolás de Los Garza, Nuevo León, Mexico

    Y. Peña

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  1. Sarah Messina
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Correspondence to Sarah Messina.

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Messina, S., Rodríguez-Lazcano, Y., Campos, J. et al. Thin films of AgIn5(S/Se)8 prepared in a two stage process. J Mater Sci: Mater Electron 28, 1812–1818 (2017). https://doi.org/10.1007/s10854-016-5730-8

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  • DOI: https://doi.org/10.1007/s10854-016-5730-8

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