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Some physical investigations on In2S3:Sn sprayed thin film

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Abstract

Tin doped In2S3 film was grown by chemical spray pyrolysis method using compressed air as a carrier gas. Structural, morphological, optical and electrical properties of film have been investigated. X-ray diffraction shows well crystallized film according to cubic β-In2S3 phase. The FESEM photograph reveals that the film is dense without pinholes. The average surface roughness and the root-mean square roughness are about 18 and 14 nm, respectively. Optical transmission is more than 60 % in visible region and 85 % in infrared one. Direct band gap energy of 2.62 eV has been found. The impedance plane plot shows semicircle arcs and an electrical equivalent circuit has been proposed to explain the impedance results. We have performed ac and dc conductivity studies inspired from Jonscher and correlated barrier-hopping models. These studies helped establishing significant correlation between temperature and activation energy. From the impedance spectroscopy analysis, we investigated the frequency relaxation phenomenon and the equivalent circuit of such thin film.

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Acknowledgments

This work was supported by MINECO, Spain (Project MAT2012-36754-C02-01, MAT2015-67458-P); Xunta de Galicia, Spain (Grupos Ref. Comp. GRC2013-044, FEDER Funds) and the Tunisian Ministry of Higher Education and Scientific Research.

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Authors and Affiliations

  1. Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’environnement, Faculté des Sciences de Gabès, Université de Gabès, Cité Erriadh, Zrig, 6072, Gabès, Tunisia

    M. Kraini, N. Bouguila, A. Bettaibi, J. Koaib, K. Khirouni & S. Alaya

  2. Laboratory of Magnetism and Nanotechnology, Institute of Technological Research, Universidade de Santiago de Compostela, 15782, Santiago de Compostela, Spain

    C. Vázquez-Vázquez & M. A. López-Quintela

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  1. M. Kraini
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  2. N. Bouguila
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Correspondence to M. Kraini.

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Kraini, M., Bouguila, N., Bettaibi, A. et al. Some physical investigations on In2S3:Sn sprayed thin film. J Mater Sci: Mater Electron 27, 11556–11564 (2016). https://doi.org/10.1007/s10854-016-5286-7

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