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Growth mechanism of intermetallic compound and mechanical properties of nickel (Ni) nanoparticle doped low melting temperature tin–bismuth (Sn–Bi) solder

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Abstract

This paper investigates the effects of Ni nanoparticles on the formation of intermetallic compound (IMC) layers and mechanical properties of low melting temperature Sn–58Bi (wt%) based solders on copper (Cu) substrate. At the initial reaction for the plain Sn–Bi solder/Cu substrate system, an island-shaped Cu6Sn5 IMC layer was found to adhere at the substrate surface. A very thin Cu3Sn IMC layer was also observed between the Cu6Sn5 IMC layer and Cu substrate as the reaction time increased. However, in the composite solders doped with Ni nanoparticles, a scallop-shaped ternary (Cu, Ni)–Sn IMC layer appeared at the interface without Cu3Sn IMC layer. In the solder ball region, the Bi phase with bright contrast was homogeneously distributed in the β-Sn matrix. After adding the Ni nanoparticles, an additional very fine Sn–Ni IMC particle was found to have been distributed in the β-Sn matrix. The IMC layer thicknesses were increased with the reaction time and temperature. However, the IMC growth behavior of composite solder was slower than that of the plain solder system. Furthermore, the mechanical properties of the composite solder exhibited higher values than that of the plain Sn–Bi solder due to the strengthening effect of fine Sn–Ni IMC particles.

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Acknowledgments

The authors acknowledge the financial support provided by The University of New South Wales (UNSW) for the project InfoEd Ref: RG124326.

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Authors and Affiliations

  1. School of Mechanical and Manufacturing Engineering, The University of New South Wales, Sydney, NSW, 2052, Australia

    Asit Kumar Gain & Liangchi Zhang

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  1. Asit Kumar Gain
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  2. Liangchi Zhang
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Correspondence to Asit Kumar Gain.

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Gain, A.K., Zhang, L. Growth mechanism of intermetallic compound and mechanical properties of nickel (Ni) nanoparticle doped low melting temperature tin–bismuth (Sn–Bi) solder. J Mater Sci: Mater Electron 27, 781–794 (2016). https://doi.org/10.1007/s10854-015-3817-2

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  • DOI: https://doi.org/10.1007/s10854-015-3817-2

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