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Relationships between Sn substitution for Ti and microwave dielectric properties of Mg2(Ti1−xSnx)O4 ceramics system

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Abstract

Mg2(Ti1−xSnx)O4 (x = 0–1) ceramics were synthesized by the conventional solid-state reaction route. The effect of Sn substitution on the structure, microstructure and microwave dielectric properties of Mg2(Ti1−xSnx)O4 has been investigated. Formation of the solid solution was confirmed by the X-ray diffraction and the measured lattice parameters, which varied linearly from Mg2TiO4 (a = b = c = 8.4402 Å) to Mg2SnO4 (a = b = c = 8.6372 Å). Theoretical density, observed ionic polarizabilities and packing fraction were analyzed. A fine microwave dielectric properties (εr = 12.18, Q × f = 170,130 GHz, τf = −51.7 °C) was achieved for Mg2(Ti0.8Sn0.2)O4 ceramics sintered at 1,510 °C for 4 h.

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Acknowledgments

This work is supported by National Natural Science Funds of China (Grant No. 51402039). Supported by the Open Foundation of National Engineering Research Center of Electromagnetic Radiation Control Materials (ZYGX2013K001-7).

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Authors and Affiliations

  1. National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Hao Li, Bin Tang, Yingxiang Li, Zhenjun Qing, Hetuo Chen & Shuren Zhang

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  1. Hao Li
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  2. Bin Tang
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  3. Yingxiang Li
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  4. Zhenjun Qing
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  5. Hetuo Chen
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Correspondence to Hao Li or Bin Tang.

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Li, H., Tang, B., Li, Y. et al. Relationships between Sn substitution for Ti and microwave dielectric properties of Mg2(Ti1−xSnx)O4 ceramics system. J Mater Sci: Mater Electron 26, 571–577 (2015). https://doi.org/10.1007/s10854-014-2436-7

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