Abstract
In the zinc-blende (zb) III-Ns (BN, GaN, AlN and InN), accurate knowledge of the phonon dispersions [\(\omega_{j} \left( {\vec{\varvec{q}}} \right)] \) and thermodynamical characteristics [e.g., Debye temperature \(\Theta_{{\text{D}}} \left( T \right)\), specific heat \(C_{v} (T\))] are important not only from the academic standpoint but also for designing, evaluating/optimizing and integrating multifunctional devices into the highly demanding micro/nano-electronic circuits. In the quasi-harmonic approximation, our realistic rigid-ion-model calculations of the pressure dependent \(\omega_{j} \left( {\vec{\user2{q}}} \right)\), \(\Theta_{{\text{D}}} \left( T \right) \) and \(C_{v } \left( T \right)\) for zb InN agreed very well with the experimental and first-principles data but are found different from a few simulations available in the literature. Like other cubic BN, GaN and AlN materials, we have perceived no negative thermal expansion (NTE) \(\alpha \left( T \right)\) in the zb InN. Unlike many III–V compound semiconductors, no NTE in zb III-N materials at low temperatures is linked to the weak softening of \(\gamma_{{{\text{TA}}\left( {{\text{X}},{\text{ L}}} \right)}}\) modes with strong directional partial covalent bonding. Variations of \(\alpha \left( T \right)\) in the cubic BN, GaN, AlN and InN have exhibited features much like their \(C_{v } \left( T \right)^{\prime}{\text{s}}\) and revealed superior characteristics from the wurtzite III-N materials with intriguing industrial potentials for thermal management applications.
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References
Kakarla AB, Kong I (2022) In vitro and in vivo cytotoxicity of boron nitride nanotubes: a systematic review. Nanomaterials 12:2069. https://doi.org/10.3390/nano12122069
Hayat A, Sohail M, Hamdy MS, Taha TA, AlSalem HS, Alenad AM, Amin MA, Shah R, Palamanit A, Khan J, Nawawi WI, Mane SKB (2022) Fabrication, characteristics, and applications of boron nitride and their composite nanomaterials. Surf Interfaces 29:101725
Gao P, Xiao Y, Wang Y, Li L, Li W, Tao W (2021) Biomedical applications of 2D mono elemental materials formed by group VA and VIA: a concise review. J Nanobiotechnol 19(96):2–23. https://doi.org/10.1186/s12951-021-00825-4
Song P, Fu H, Wang Y, Chen C, Ou P, Rashid RT, Duan S, Song J, Mi Z, Liu X (2021) A microfluidic field-effect transistor biosensor with rolled-up indium nitride microtubes. Biosens Bioelectron 190:113264
Wu K, Huang S, Wang W, Li G (2021) Recent progress in III-nitride nanosheets: properties, materials and applications. Semicond Sci Technol 36:123002
Sterling S (2021) Structural studies of boron nitride compounds under extreme conditions, Master’s thesis. University of Ottawa
Chen W-Y, Shi X-L, Zou J, Chen Z-G (2022) Thermoelectric coolers for on-chip thermal management: materials, design, and optimization materials science & engineering R. Mater Sci Eng R 151:10070
Cao T, Shi X-L, Chen Z-G (2023) Advances in the design and assembly of flexible thermoelectric device. Prog Mater Sci 131:101003
Peng Q, Sun X, Wang H, Yang Y, Wen X, Huang C, Liu S, De S (2017) Theoretical prediction of a graphene-like structure of indium nitride: a promising excellent material for optoelectronics. Appl Mater Today 7:169–178
Krishna S, Sharma A, Aggarwal N, Husale S, Gupta G (2017) Ultrafast photo response and enhanced photoresponsivity of Indium Nitride based broad band photodetector. Sol Energy Mater Sol Cells 172:376–383
Zhang W, Chong YM, He B, Bello I, Lee S-T (2014) Cubic boron nitride films: properties and applications. In: Sarin VK, Marie D, Lianes L (eds) Comprehensive hard materials. Elsevier, New York, pp 607–639
Ratchford DC, Winta C, Chatzakis J, Chase I, Ellis T, Passler NC, Winterstein J, Dev P, Razdolski I, Matson JR, Nolen JR, Tischler JG, Vurgaftman I, Katz MB, Nepal N, Hardy MT, Hachtel JA, Idrobo J-C, Reinecke TL, Giles AJ, Katzer DS, Bassim ND, Stroud RM, Wolf M, Paarmann A, Caldwell JD (2019) Controlling the infrared dielectric function through atomic-scale heterostructures. ACS Nano 13:6730–6741
Chen J, Oh S, Nabulsi KN, Johnson H, Wang W, Ryou J-H (2019) Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator. Nano Energy 57:670–679
Cai Q, Scullion D, Gan W, Falin A, Zhang S, Watanabe K, Taniguchi T, Chen Y, Santos EJG, Li LH (2019) High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion. Sci Adv 5:1–8
Doan TC, Li J, Lin JY, Jiang HX (2016) Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy. Appl Phys Lett 109:122101
Acharya AR (2013) Group III – nitride semiconductors: preeminent materials for modern electronic and optoelectronic applications. Himal Phys 4:22
Eddy CR Jr, Nepal N, Hite JK, Mastro MA (2013) Perspectives on future directions in III-N semiconductor research. J Vac Sci Technol A 31:058501. https://doi.org/10.1116/1.4813687
Yamada H (2008) Diamond, single crystals of electronic materials. Mater Today. https://doi.org/10.1016/B978-0-08-102096-8.00010-0
Mokhov EN, Wolfson AA (2019) Growth of AlN and GaN crystals by sublimation. Single Cryst Electr Mater. https://doi.org/10.1016/B978-0-08-102096-8.00012-4
Clemente AV, Morales M, Chauvat MP, Dasilva YAR, Poisson MA, Heuken M, Giesen C, Ruterana P (2010) Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications. Proc of SPIE 7602:76020K-K76021
Tohei T, Kuwabara A, Oba F, Tanaka I (2006) Debye temperature and stiffness of carbon and boron nitride polymorphs from first principles calculations. Phys Rev B 73:064304
Zhang XW, Boyen HG, Deyneka N, Ziemann P, Banhart F, Schreck M (2003) Epitaxy of cubic boron nitride on (001) oriented diamond. Nat Mater 2:312
Geisz JF, Friedman DJ (2002) III–N–V semiconductors for solar photovoltaic applications. Semicond Sci Technol 17:769–777
Storm DF, Maximenko SI, Lang AC, Nepal N, Feygelson TI, Pate BB, Affouda CA, Meyer DJ (2022) Mg-facilitated growth of cubic boron nitride by ion beam-assisted molecular beam epitaxy. Phys Status Solidi RRL 16:2200036
Wrigley J, Bradford J, James T, Cheng TS, Thomas J, Mellor CJ, Khlobystov AN, Eaves L, Foxon CT, Novikov SV, Beton PH (2021) Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures. 2D Mater 8:034001
Palmese E, Peart MR, Borovac D, Song R, Tansu N, Wierer JJ Jr (2021) Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN. J Appl Phys 129:125105. https://doi.org/10.1063/5.0035711
Hirama K, Taniyasu Y, Yamamoto H, Kumakura K (2020) Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping. Appl Phys Lett 116:162104. https://doi.org/10.1063/1.5143791
Hirama K, Taniyasu Y, Yamamoto H, Kumakura K (2019) Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates. J Appl Phys 125:115303. https://doi.org/10.1063/1.5086966
Yamaguchi T, Sasaki T, Fujikawa S, Takahasi M, Araki T, Onuma T, Honda T, Nanishi Y (2019) In situ synchrotron X-ray diffraction reciprocal space mapping measurements in the RF-MBE growth of GaInN on GaN and InN. Crystals 9:631. https://doi.org/10.3390/cryst9120631
Casallas-Moreno YL, Gallardo-Hernández S, Yee-Rendón CM, Ramírez-López M, Guillén-Cervantes A, Arias-Cerón JS, Huerta-Ruelas J, Santoyo-Salazar J, Mendoza-Álvarez JG, López-López M (2019) Growth mechanism and properties of self-assembled InN nanocolumns on Al covered Si(111) substrates by PA-MBE. Materials 12:3203. https://doi.org/10.3390/ma12193203
Cheng TS, Summerfield A, Mellor CJ, Khlobystov AN, Eaves L, Foxon CT, Beton PH, Novikov SV (2018) High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes. Materials 11:1119. https://doi.org/10.3390/ma11071119
Kobayashi A, Oseki M, Ohta J, Fujioka H (2018) Epitaxial growth of thick polar and semipolar InN films on Yttria-stabilized zirconia using pulsed sputtering deposition. Phys Status Solidi B 255:1700320
Liang D, Quhe R, Chen Y, Wu L, Wang Q, Guan P, Wang S, Lu P (2017) Electronic and excitonic properties of two dimensional and bulk InN crystals. RSC Adv 7:42455
Yang C-C, Lo I, Shih C-H, Hu C-H, Wang Y-C, Lin Y-C, Tsai C-D, Huang H-C, Chou MMC, Yu C-C, Jang D-J (2017) Growth and characteristics of high-quality InN by plasma-assisted molecular beam epitaxy. INTECH. https://doi.org/10.5772/65812
Shammas J, Yang Y, Wang X, Koeck FAM, McCartney MR, Smith DJ, Nemanich RJ (2017) Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition. Appl Phys Lett 111:17604
Kudyakova VS, Shishkin RA, Elagin AA, Baranov MV, Beketov AR (2017) Aluminium nitride cubic modifications synthesis methods and its features. Rev J Eur Ceram Soc 37:1143–1156. https://doi.org/10.1016/j.jeurceramsoc.2016.11.051
Simonyan AK, Gambaryan KM, Aroutiounian VM (2017) Growth features and nucleation mechanism of Ga1-x-yInxAlyN material system on GaN substrate. Adv Nano Res 5:303–311. https://doi.org/10.12989/anr.2017.5.4.303
Däubler J, Passow T, Aidam R, Köhler K, Kirste L, Kunzer M, Wagner J (2014) Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter. Appl Phys Lett 105:111111. https://doi.org/10.1063/1.4895067
Iida D, Nagata K, Makino T, Iwaya M, Kamiyama S, Amano H, Akasaki I, Bandoh A, Udagawa T (2010) Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy. Appl Phys Express 3:075601. https://doi.org/10.1143/APEX.3.075601
Izyumskaya N, Demchenko DO, Das S, Özgür Ü, Avrutin V, Morkoç H (2017) Recent development of boron nitride towards electronic applications. Adv Electron Mater 3:1600485
Terashima W, Che S-B, Ishitani Y, Yoshikawa A (2006) Growth and characterization of AlInN ternary alloys in whole composition range and fabrication of InN/AlInN multiple quantum wells by RF molecular beam epitaxy. Jpn J Appl Phys 45:L539–L542
Hangleiter A, Hitzel F, Netzel C, Fuhrmann D, Rossow U, Ade G, Hinze P (2005) Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. PRL 95:127402
Farivar R, Andersson TG (2010) Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy. Phys Status Solidi C 7:25–27. https://doi.org/10.1002/pssc.200982610
Chen JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen KH (2007) Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source. J Phys Chem A 111:6755–6759
Fehlberg TB, Membreno GAU, Nener BD, Parish G, Gallinat CS, Koblmüller G, Rajan S, Bernardis S, Speck JS (2006) Characterization of multiple carrier transport in indium nitride grown by molecular beam epitaxy. Jpn J Appl Phys 45:L1090–L1092
Ueno M, Yoshida M, Onodera A, Shimomura O, Takemura K (1994) Stability of the wurtzite-type structure under high pressure: GaN and InN. Phys Rev B 49:14
Xia H, Xia Q, Ruoff AL (1993) High-pressure structure of gallium nitride: Wurtzite-to-rocksalt phase transition. Phys Rev B 47:12925
Muñoz A, Kunc K (1993) Structure and static properties of indium nitride at low and moderate pressures. J Phys Condens Marter 5:6015–6022
Christensen NE, Gorczyca I (1994) Optical and structural properties of III-V nitrides under pressure. Phys Rev B 50:4397
Siegel A, Parlinski K, Wdowik UD (2006) Ab initio calculation of structural phase transitions in AlN crystal. Phys Rev B 74:104116
Saib S, Bouarissa N (2007) Structural phase transformations of GaN and InN under high pressure. Phys B 387:377–382
Serrano J, Rubio A, Hernández E, Muñoz A, Mujica A (2000) Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures. Phys Rev B 62:16612
Tabata A, Lima AP, Teles LK, Scolfaro LMR, Leite JR, Lemos V, Schöttker B, Frey T, Schikora D, Lischka K (1999) Structural properties and Raman modes of zinc blende InN epitaxial layers. Appl Phys Lett 74:362. https://doi.org/10.1063/1.123072
Wang X, Chen S, Lin W, Li S, Chen H, Liu D, Kang J (2011) Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy. J Mater Res 26:775
Manjón FJ, Errandonea D, Romero AH, Garro N, Serrano J, Kuball M (2008) Lattice dynamics of wurtzite and rocksalt AlN under high pressure: effect of compression on the crystal anisotropy of wurtzite-type semiconductors. Phys Rev B 77:205204
Cai J, Chen N (2007) Microscopic mechanism of the wurtzite-to-rocksalt phase transition of the group-III nitrides from first principles. Phys Rev B 75:134109
Peng F, Chen D, Fu H, Cheng X (2008) The phase transition and the elastic and thermodynamic properties of AlN: First principles. Phys B 403:4259–4263
Cheng YC, Wu XL, Zhu J, Xu LL, Li SH, Chu PK (2008) Optical properties of rocksalt and zinc blende AlN phases: First-principles calculations. J Appl Phys 103:073707
Varshney D, Joshi G, Kaurav N, Singh RK (2009) Structural phase transition (zincblende–rocksalt) and elastic properties in AlY (Y = N, P and As) compounds: pressure-induced effects. J Phys Chem Solids 70:451–458
Wei Z, Yan C, Jun Z, Rong CX (2009) Structural, thermodynamic and electronic properties of zinc-blende AlN from first-principles calculations. Chin Phys B 18:1207
Xiao HY, Jiang XD, Duan G, Gao F, Zu XT, Weber WJ (2010) First-principles calculations of pressure-induced phase transformation in AlN and GaN. Comput Mater Sci 48:768–772
Kamimura J, Ramsteiner M, Jahn U, Lu CYJ, Kikuchi A, Kishino K, Riechert H (2016) High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction. J Phys D: Appl Phys 49:155106
Ibáñez J, Oliva R, Manján FJ, Segura A, Yamaguchi T, Nanishi Y, Cuscó R, Artús L (2013) High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy. Phys Rev B 88:115202
Callsen G, Wagner MR, Reparaz JS, Nippert F, Kure T, Kalinowski S, Hoffmann A, Ford MJ, Phillips MR, Dalmau RF, Schlesser R, Collazo R, Sitar Z (2014) Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements. Phys Rev B 90:205206
Bayarjargal L, Wiehl L, Winkler B (2013) Influence of grain size, surface energy, and deviatoric stress on the pressure-induced phase transition of ZnO and AlN. High Press Res 33:642–651. https://doi.org/10.1080/08957959.2013.800514
Sadovyi B, Wierzbowska M, Stelmakh S, Boccato S, Gierlotka S, Irifune T, Porowski S, Grzegory I (2020) Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure. Phys Rev B 102:235109
Reparaz JS, da Silva KP, Romero AH, Serrano J, Wagner MR, Callsen G, Choi S, Speck J, Goñi AR (2018) Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN. Phys Rev B 98:165204
Wright AF (1997) Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN. J Appl Phys 82:2833. https://doi.org/10.1063/1.366114
Łopuszyński M, Majewski JA (2007) Ab initio calculations of third-order elastic constants and related properties for selected semiconductors. Phys Rev B 76:045202
Caro MA, Schulz S, O’Reilly EP (2012) Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides. Phys Rev B 86:014117
Samantaray CB, Singh RN (2005) Review of synthesis and properties of cubic boron nitride (c-BN) thin films. Inter Mater Rev 50:313
Hassan AM, Hamad AS, Mhawsh KA, Lazim ZM (2022) Characteristics of indium nitride thin films deposited on silicon substrates by reactive sputtering with nitride buffer layers, IRAQI. J Appl Phys 18:23–26
Qian ZG, Shen WZ, Ogawa H, Guo QX (2004) Experimental studies of lattice dynamical properties in indium nitride. J Phys Condens Matter 16:R381–R414
Serrano J, Bosak A, Krisch M, Manjo’n FJ, Romero AH, Garro N, Wang X, Yoshikawa A, Kuball M (2011) InN thin film lattice dynamics by grazing incidence inelastic X-ray scattering. Phys Rev Lett 106:205501
Usman Z, Cao C, Mahmood T (2013) Pressure based first-principles study of the electronic, elastic, optic and phonon properties of zinc blende InN. Phys B 430:67–73
Hou H-J, Zhu S-F, Zhao B-J, Yu Y, Zhang S-R, Xie L-H (2012) The structural, elastic and thermodynamical properties of zinc-blend structure InN from first principles. Phys B 407:408–411
Hattabi I, Abdiche A, Naqib SH, Khenata R (2019) First-principles calculations of elastic and thermodynamic properties under hydrostatic pressure of cubic InNxP1-x ternary alloys. Chin J Phys 59:449–464
Yan ZW, Ban SL, Liang XX (2003) Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure. Eur Phys J B 35:41–47. https://doi.org/10.1140/epjb/e2003-00254-8
Scharoch P, Winiarski MJ, Polak MP (2014) Ab initio study of InxGa1-xN Performance of the alchemical mixing approximation. Comput Mater Sci 81:358–365
Saib S, Bouarissa N, Rodríguez-Hernández P, Muñoz A (2007) Ab initio lattice dynamics of zinc-blende GaxIn1−xN alloys. J Phys Condens Matter 19:486209
Bechstedt F, Grossner U, Furthmüller J (2000) Dynamics and polarization of group-III nitride lattices: a first-principles study. Phys Rev B 62:8003
Bungaro C, Rapcewicz K, Bernholc J (2000) Ab initio phonon dispersions of wurtzite AlN, GaN, and InN. Phys Rev B 61:6720
Tütüncü HM, Srivastava GP (2000) Phonons in zinc-blende and wurtzite phases of GaN, AlN, and BN with the adiabatic bond-charge model. Phys Rev B 62:5028
Tütüncü HM, Srivastava GP, Duman S (2002) Lattice dynamics of the zinc-blende and wurtzite phases of nitrides. Phys B 316–317:190–194
Shinde S, Pandya A, Jha PK (2010) Pressure dependent lattice specific heat and mode Grüneisen parameters for group III nitrides. AIP Conf Proc 1249:174. https://doi.org/10.1063/1.3466550
Panchal JM, Joshi M, Gajjar PN (2016) High pressure structural, electronic and vibrational properties of InN and InP. Phase Transit 89(3):283–309
Saib S, Bouarissa N, Rodríguez-Hernández P, Muñoz A (2008) First-principles study of high-pressure phonon dispersions of wurtzite, zinc-blende, and rocksalt AlN. J Appl Phys 103:013506
Sedmidubsk D, Leitner J, Svoboda P, Sofera Z, Macháček J (2009) Heat Capacity and Phonon Spectra of AIIIN- Experiment and Calculation. J Therm Anal Calorim 95:403–407
Xu L, Wang R-Z, Yang X, Yan H (2011) Thermal expansions in wurtzite AlN, GaN, and InN: first-principles phonon calculations. J Appl Phys 110:043528
Wang S (2009) Studies on thermodynamic properties of III–V compounds by first-principles response-function calculation. Phys Status Solidi B 246:1618–1627. https://doi.org/10.1002/pssb.200844379
Reeber RR, Wang K (2001) Thermal expansion and elastic properties of InN. Appl Phys Lett 79:1602. https://doi.org/10.1063/1.1400082
Weinstein BA (2021) Pressure-softening of zone-edge TA phonons and the fourfold to sixfold phase change. Phys Rev B 104:054105
Paszkowicz W, Adamczyk J, Krukowski S, Leszczyński M, Porowski S, Sokolowski JA, Michalec M, Łasocha W (1999) Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium. Philos Mag A 79(5):1145–1154. https://doi.org/10.1080/01418619908210352
Gu MX, Pan LK, Yeung TCA, Tay BK, Sun CQ (2007) Atomistic origin of the thermally driven softening of Raman optical phonons in group III nitrides. J Phys Chem C 111:13606–13610
Kunc K (1973) Dynamique de réseau de composés ANB8-N présentant la structure de la blende. Ann Phys 8:319
Murnaghan FD (1937) Finite deformations of an elastic solid. Am J Math 49:235
Plumelle P, Vandevyver M (1976) Lattice dynamics of ZnTe and CdTe. Phys Stat Sol 73:271
Barron THK (1957) Grüneisen parameters for the equation of state of solids. Ann Phys 1:77
Yu DV, Emtsev VV, Goncharuk IN, Smirnov AN, Petrikov VD, Mamutin VV, Vekshin VA, Ivanov SV, Smirnov MB, Inushima T (1999) Experimental and theoretical studies of phonons in hexagonal InN. Appl Phys Lett 75:3297
Pässler R (2010) parameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semiconductors. Phys Status Solidi (b) 247:77–92. https://doi.org/10.1002/pssb.200945158
Krukowski S, Witek A, Adamczyk J, Jun J, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wróblewski M, Presz A, Gierlotka A, Stelmach S, Palosz B, Porowski S, Zinnt P (1998) Thermal properties of indium nitride. J Phys Chem Solids 59:289–295
Yaddanapudi K (2018) First-principles study of structural phase transformation and dynamical stability of cubic AlN semiconductors. AIP Adv 8:125006
Sheleg AU, Savastenko VA (1976) Izv. Akad. Nauk. BSSR. Ser Fiz Mat Nauk 3:126
Khludkov SS, Prudaev IA, Tolbanov OP (2014) Physical properties of indium nitride, impurities, and defects. Russ Phys J 56:997
Talwar DN (2017) On the pressure-dependent phonon characteristics and anomalous thermal expansion coefficient of 3C-SiC. Mater Sci Eng, B 226:1–9
Talwar DN, Vandevyver M (1990) Pressure-dependent phonon properties of III-V compound semiconductors. Phys Rev B 41:11293
Chen X, Li C, Tian F, Gamage GA, Sullivan S, Zhou J, Broido D, Ren Z, Shi L (2019) Thermal expansion coefficient and lattice anharmonicity of cubic boron arsenide. Phys Rev Appl 11:064070
Landolt-Bornstein (2014) New data and updates for several IIa-VI compounds. In: Rossler U (ed) Structural properties, thermal and thermodynamical properties, and lattice properties. Springer, Berlin
Pinquier C, Demangeot F, Frandon J, Pomeroy JW, Kuball M, Hubel H, van Uden NWA, Dunstan DJ, Briot O, Maleyre B, Ruffenach S, Gil B (2004) Raman scattering in hexagonal InN under high pressure. Phys Rev B 70:113202
O’Leary SK, Foutz BE, Shur MS, Eastman LF (2005) Steady-state and transient electron transport within bulk wurtzite indium nitride: an updated semiclassical three-valley Monte Carlo simulation analysis. Appl Phys Lett 87:222103
Chang Y-K, Hong FC-N (2009) Synthesis and characterization of indium nitride nanowires by plasma-assisted chemical vapor deposition. Mater Lett 63:1855–1858
Siddiqua P, Hadi WA, Shur MS, O’Leary SK (2015) A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review. J Mater Sci Mater Electron 26:4475–4512. https://doi.org/10.1007/s10854-015-3055-7
Duan XM, Stampfl C (2009) Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bond like formation from first principles. Phys Rev B 78:174202
Xie M-Y, Schubert M, Lu J, Persson POǺ, Stanishev V, Hsiao CL, Chen LC, Schaff WJ, Darakchieva V (2014) Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: the case of InN. Phys Rev B 90:195306
Kröncke H, Figge S, Epelbaum BM, Hommel D (2008) Determination of the temperature dependent thermal expansion coefficients of bulk AlN by HRXRD. Acta Phys Pol A 114:1193–1200
Sevik C (2014) Assessment on lattice thermal properties of two-dimensional honeycomb structures: graphene, h-BN, h-MoS2, and h-MoSe2 Phys. Rev B 89:035422
Karaaslan Y, Yapicioglu H, Sevik C (2020) Assessment of thermal transport properties of group-III nitrides: a classical molecular dynamics study with transferable tersoff-type interatomic potentials. Phys Rev Appl 13:034027
Sarikurt S, Abdullahi YZ, Durgun E, Ersan F (2022) Negative thermal expansion of group III-Nitride monolayers. J Phys D: Appl Phys 55:315303
Zhong Y, Zhang L, Park J-H, Cruz S, Li L, Liang Guo L, Kong J, Wan EN (2022) A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers. Sci Adv 8:eabo3783
Faraji M, Bafekry A, Fadlallah MM, Jappor HR, Nguyen CV, Ghergherehchi M (2022) Two-dimensional XY monolayers (X = Al, Ga, In; Y = N, P, As) with a double layer hexagonal structure: A first-principles perspective Two-dimensional XY monolayers (X = Al, Ga, In; Y = N, P, As) with a double layer hexagonal structure: A first-principles perspective. Appl Surf Sci 590:152998
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The author (DNT) is thankful to Dr. Deanne Snavely, the Dean of the College of Natural Sciences and Mathematics (C-NSM) at Indiana University of Pennsylvania (IUP) for the travel support and to the IUP Graduate school for the award of an Innovation grant.
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Talwar, D.N. Pressure-dependent mode Grüneisen parameters and their impact on thermal expansion coefficient of zinc-blende InN. J Mater Sci 58, 8379–8397 (2023). https://doi.org/10.1007/s10853-023-08477-5
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DOI: https://doi.org/10.1007/s10853-023-08477-5