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Low-temperature-deposited SnO2 films for efficient planar CH3NH3PbI3 photovoltaics

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Abstract

Low-temperature-synthesized electron transport layers (ETLs) are in demand for the industrialization and flexibility of perovskite solar cells (PeSCs). SnO2 ETLs are prepared via chemical bath deposition at low temperature. Uniform SnO2 ETLs with high crystallinity and transmittance are obtained from a 0.3 M SnCl4 solution through a 100 °C heat treatment. They effectively transport electrons and weaken recombination loss in SnO2-based photovoltaics. SnO2-based PeSCs exhibit a power conversion efficiency (PCE) of 16.92% with a short-circuit current density (JSC) of 21.48 mA cm−2 and a fill factor (FF) of 73.62%. Secondary bath modification is proposed to mend the surface pinholes of SnO2 ETLs and boost the photoelectric properties of SnO2-based devices. The photovoltaic performance of the devices based on modified SnO2 (2-SnO2) films exhibits an impressive increase compared with unembellished ones due to less pinholes and suppressed surface defects. The open circuit voltage (VOC) and FF of 2-SnO2-based photovoltaics are enhanced to 1.10 V and 76.71%, respectively, resulting in PCE to 18.04%. Simultaneously, the dark current and hysteresis of 2-SnO2-based PeSCs are reduced because the secondary bath refines the surface nanoparticles of ETLs, passivates defects and reduces charge recombination at ETL/perovskite interfaces. Accordingly, 2-SnO2-based photovoltaics with a large area (~ 1 cm2) achieves 12.91% efficiency.

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Acknowledgements

This work is aided financially by the National Natural Science Foundation of China (Nos. 11874143 and 11204070), Educational Commission of Hubei Province of China (No. D20191005) and Application Fundamental Research Project of Wuhan Science and Technology Bureau (No. 2019010701011396).

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Authors and Affiliations

  1. Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People’s Republic of China

    Kai Zhang, Jinxia Duan, Feng Liu, Jun Zhang & Hao Wang

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  1. Kai Zhang
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  2. Jinxia Duan
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Correspondence to Jinxia Duan or Hao Wang.

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Figure S1

a Optical transmission of the SnO2 films. b I-V linear sweeping curves of the FTO/SnO2/Au device. (TIF 761 kb)

Figure S2

a Top-view FIB image of MAPbI3 film. b and c Cross-sectional view FIB images of MAPbI3 film deposited on SnO2/FTO substrate. H1, H2 and H3 are the thickness of MAPbI3, SnO2, and FTO, respectively. EDS mapping of: d Sn, e I, and f Pb. (TIF 7558 kb)

Figure S3

Typical SEM images of SnO2 films: a 70 oC, b 100 °C, c 150 °C, and d 200 °C. (TIF 4697 kb)

Figure S4

a XRD of SnO2 films on silicon substrate. b XRD of perovskite film on SnO2 film. (TIF 773 kb)

Figure S5

Schematic diagram of modifying SnO2 thin film with small concentration of SnCl4. (TIF 1613 kb)

Figure S6

Typical J-V curves of PeSCs with large area (~1 cm2). (TIF 176 kb)

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Zhang, K., Duan, J., Liu, F. et al. Low-temperature-deposited SnO2 films for efficient planar CH3NH3PbI3 photovoltaics. J Mater Sci 56, 677–690 (2021). https://doi.org/10.1007/s10853-020-05216-y

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