Abstract
The bulk nanograined Bi2Te3 material with various mean grain size changing from ~51 to ~97 nm was prepared by microwave-assisted solvothermal method and hot pseudo-isostatic pressure. The mean grain size values obtained for various pressures, P, and temperatures, T, of the sintering process were used to estimate the changes of activation volume, V *, for self-diffusion process responsible for grain growth at sintering of material under study. Analysis of the V *(P) dependences taken at 573 and 673 K allowed us to suggest that one interstitial diffusion mechanism takes place at 573 K, while the diffusion mechanism is assumed to be changed from the vacancy mechanism at low pressures (2 and 4 GPa) to the interstitial mechanism at high pressures (6 and 8 GPa) at 673 K.
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References
Mahan G, Sales B, Sharp J (1997) Thermoelectric Materials: new Approaches to an Old Problem. Phys Today 50:42–47
Tritt TM (1999) Holey and unholey semiconductors. Science 283:804–805
Liu W, Yan X, Chen G, Ren Z (2012) Recent advances in thermoelectric nanocomposites. Nano Energy 1:42–56
Liu K, Wang T, Liu H, Xiang D (2009) Preparation and characterization of nanostructured Bi2Se3 and Sn0.5-Bi2Te3. Rare Met 28:112–116
Harman TC, Walsh MP, Laforge BE, Turner GW (2005) Nanostructured thermoelectric materials. J Electron Mater 34:19–26
Cao YQ, Zhu TT, Zhao XB, Tu JP (2008) Nanostructuring and improved performance of ternary Bi-Sb-Te thermoelectric materials. Appl Phys A 92:321–324
Pichanusakorn P, Bandaru P (2010) Nanostructured thermoelectrics. Mater Sci Eng R 67:19–63
Groza JR (1999) Nanosintering. Nanostruct Mater 12:987–992
Qian Zhang, Qinyong Zhang, Chen S, Liu W, Lukas K, Yan X, Wang H, Wang D, Opell C, Chen G, Ren Z (2012) Suppression of grain growth by additive in nanostructured p-type bismuth antimony tellurides. NanoEnergy 1:183–189
Khvostantsev LG, Slesarev VN, Brazhki VV (2004) Toroid type high-pressure device: history and prospects. High Press Res 24:371–383
Chung DY, Hogan T, Brazis P, Rocci-Lane M, Kannewurf C, Bastea M (2000) CsBi4Te6: a high performance thermoelectric material for low-temperature applications. Science 5455:1024–1027
Deng Y, Zhou XS, Wei GD, Liu J, Nan CW, Zhao SJ (2002) Solvothermal preparation and characterization of nanocrystalline Bi2Te3 powder with different morphology. J Phys Chem Solids 63:2119–2122
Humpreys FJ, Hatherly M (2004) Recrystallization and related annealing phenomena. Pergamon Press, Oxford
Buescher BJ, Gilder HM, Shea N (1973) Temperature-dependent activation volumes of self-diffusion in cadmium. Phys Rev B 7:2261–2268
Sursaeva V, Protasova S, Lojkowski W, Jun J (1999) Microstructure evolution during normal grain growth under high pressure in 2-D aluminium foils. Textures Microstruct 32:175–185
Kärger J, Heitjans P, Haberlandt R (1998) Diffusion in Condensed Matter. Vieweg & Sohn Verlagsgesellschaft mbH Braunschweig, Friedr
Brandt H (2000) Diffusion mechanisms and intrinsic point-defect properties in silicon. MRS Bull 25:22–27
Guy AG (1984) Phenomenological analysis of vacancy mechanism of self-diffusion and tracer diffusion. Mater Sci Eng 66:107–114
Neumann G, Tuijn C (2002) Diffusion mechanisms: the vacancy diffusion coefficient. Solid State Phenom 68:19–20
Erdelyi G, Erdelyi Z, Beke DL, Bernardini J, Lexcellent C (2000) Pressure dependence of Ni self-diffusion in NiTi. Phys Rev B 62:11284–11287
Ural A, Griffin PB, Plummer JD (1998) Experimental evidence for a dual vacancy-interstitial mechanism of self-diffusion in silicon. Appl Phys Lett 73:1706–1708
Curtin HR, Decker DL, Vanfleet HB (1965) Effect on pressure on the intermetallic diffusion on silver in lead. Phys Rev B 139:A1552–A1557
Ivanov O, Maradudina O, Lyubushkin R (2015) Grain size effect on electrical resistivity of bulk nanograined Bi2Te3 material. Mater Charact 99:175–179
Acknowledgements
All of studies were carried out by the scientific equipment of the joint research center “Diagnostics of structure and properties of nanomaterials” of Belgorod National State University which financially supported with Ministry of Science and Education of RF under project No 14.594.21.0010, unique code RFMEFI59414X0010. This work was also financially supported by the Ministry of Education and Science of the Russian Federation under projects Nos 2014/420-1 and 3.308.2014/K.
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Ivanov, O., Soklakova, O., Lyubushkin, R. et al. Grain structure evolution at sintering of the bulk Bi2Te3 nanomaterial under hot pseudo-isostatic pressure. J Mater Sci 51, 3415–3421 (2016). https://doi.org/10.1007/s10853-015-9658-9
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DOI: https://doi.org/10.1007/s10853-015-9658-9