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Thermoelectric Properties of Nanocrystalline Bi2(Te1−x Se x )3 Prepared by High-Pressure Sintering

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Abstract

Bi2(Te1−x Se x )3 (x = 0, 0.03, 0.05, 0.07, 0.10) bulk materials were prepared by high-pressure (6.0 GPa) sintering (HPS) at 673 K. The samples were then annealed under vacuum, at 633 K, for 36 h. Phase composition, morphology, and thermoelectric (TE) properties were characterized. The alloys consisted of nanoparticles before and after annealing. Such nanostructures effectively reduce lattice thermal conductivity by enhancing phonon scattering. Substitution of tellurium by selenium had a substantial effect on the electron transport properties of the Bi2(Te1−x Se x )3 alloys. HPS with annealing can improve TE properties by improving the electron transport properties and simultaneously reducing the lattice thermal conductivity of nanostructured samples. A peak thermoelectric figure of merit (ZT) of 0.81 at 373 K was achieved for the annealed sample with x = 0.10; this value ZT was approximately 8% higher than that of n-type zone-melted material, making these materials more attractive for commercial applications.

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Authors and Affiliations

  1. Institution of Nuclear and New Energy Materials, University of Science and Technology Beijing, Beijing, 100083, China

    Ping Zou, Guiying Xu & Song Wang

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  1. Ping Zou
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  2. Guiying Xu
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  3. Song Wang
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Correspondence to Guiying Xu.

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Zou, P., Xu, G. & Wang, S. Thermoelectric Properties of Nanocrystalline Bi2(Te1−x Se x )3 Prepared by High-Pressure Sintering. J. Electron. Mater. 44, 1592–1598 (2015). https://doi.org/10.1007/s11664-014-3487-5

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  • DOI: https://doi.org/10.1007/s11664-014-3487-5

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