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Toward reliable RRAM performance: macro- and micro-analysis of operation processes

  • S.I. : Computational Electronics of Emerging Memory Elements
  • Published:
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Abstract

Resistive random access memory (RRAM) technology promises superior performance and scalability while employing well-developed fabrication processes. Conductance in insulating oxides employed in RRAM devices can be strongly affected by atomic-level changes that makes cell switching properties extremely sensitive to operation conditions inducing local structural modifications. This opens an opportunity to condition the memory cell stack by forming a conductive filament capable of high frequency, low energy switching. Certain materials with pre-existing conductive paths, in particular some polycrystalline oxides, like hafnia, are shown to respond well to this approach. For this class of materials, the concept of ultra-fast pulse technique as an ultimate method for assessing RRAM switching capabilities in circuitry operations is discussed. Hafnia-based cells demonstrate compliance-free (1R) forming with no current overshoot, low operation currents, and reduced variability.

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Authors and Affiliations

  1. The Aerospace Corporation, Los Angeles, CA, 90009, USA

    Gennadi Bersuker & Maribeth S. Mason

  2. Engineering Physics Division, NIST, Gaithersburg, MD, 20899, USA

    Dmitry Veksler, David M. Nminibapiel, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan & Kin P. Cheung

  3. Old Dominion University, Norfolk, VA, USA

    Helmut Baumgart

Authors
  1. Gennadi Bersuker
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  2. Dmitry Veksler
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  3. David M. Nminibapiel
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Correspondence to Gennadi Bersuker.

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Bersuker, G., Veksler, D., Nminibapiel, D.M. et al. Toward reliable RRAM performance: macro- and micro-analysis of operation processes. J Comput Electron 16, 1085–1094 (2017). https://doi.org/10.1007/s10825-017-1105-5

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