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A new floating-gate MOSFET model for analog circuit simulation and design

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Abstract

In this paper, a new open source floating-gate MOSFET (FGMOSFET) device-level micro-model to facilitate accurate analog circuit design is presented. The floating gate is charged by the Fowler–Nordheim tunneling effect. The equations representing the new device model were explored and verified on MATLAB. Subsequently, Verilog-A script was employed to combine the equations and build the complete device model. The new FGMOSFET circuit model was plugged-in as a pop-up menu component in a standard 130 nm CMOS technology design library. Thus, it can be instanced directly on a schematic editor palette for analog circuit simulation and design in a similar fashion as the standard MOSFET devices.

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Authors and Affiliations

  1. Center for Research in Analog and VLSI Microsystem Design (CRAVE), School of Engineering and Advanced Technology (SEAT), Massey University, Room: AV 2.3, Albany Village Level-2, Albany, Auckland, 0632, New Zealand

    Chaoping Zhang & S. M. Rezaul Hasan

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  1. Chaoping Zhang
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  2. S. M. Rezaul Hasan
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Correspondence to S. M. Rezaul Hasan.

Appendix

Appendix

The key Verilog-A code of the proposed open source FGMOSFET model.

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Zhang, C., Hasan, S.M.R. A new floating-gate MOSFET model for analog circuit simulation and design. Analog Integr Circ Sig Process 101, 1–11 (2019). https://doi.org/10.1007/s10470-018-1374-3

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