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A low-power relaxation oscillator with high frequency stability for RFID

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Abstract

A low-power relaxation oscillator with a high frequency stability is presented for radio frequency identification (RFID). This oscillator implements an improved self-biased and a comparator multiplexing techniques to reduce the power consumption and chip area. A capacitor resetting delay cancellation technique based on a two-phase operation and a proportional to absolute temperature (PTAT) current with an upward curvature versus the temperature are adopted to maintain the frequency stability. The oscillator is designed in a 65 nm standard CMOS process and occupies a small area of 0.0216 mm2. The post-layout simulation results show that a frequency drift of 0.95% from 0.7 to 1.7 V and a temperature stability of 27 ppm/°C as the temperature varies from − 40 to 85 °C at a typical working frequency of 1.92 MHz. Under a supply voltage of 0.7 V, the maximum power consumption is only 15.4 μW at − 40 °C. At room temperature, the figure of merit (FOM1 and FOM2) are 8 nW/kHz and 89.5 dB, respectively, which makes it more efficient than relaxation oscillators reported to date.

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Authors and Affiliations

  1. Institute of RF-&OE-ICs, School of Information Science and Engineering, Southeast University, Nanjing, 210096, China

    Yuanxin Bao, Wenyuan Li & Cheng Wang

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  1. Yuanxin Bao
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  2. Wenyuan Li
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  3. Cheng Wang
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Correspondence to Yuanxin Bao.

Additional information

This work has been supported by the National Natural Science Foundation of China (No.61471119), Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), Topnotch Academic Programs Project of Jiangsu Higher Education Institutions (TAPP) PPZY2015A035 and Academic Degree Postgraduate Innovation Project of Jiangsu Regular University (KYLX16-0215).

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Bao, Y., Li, W. & Wang, C. A low-power relaxation oscillator with high frequency stability for RFID. Analog Integr Circ Sig Process 98, 535–543 (2019). https://doi.org/10.1007/s10470-018-1338-7

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  • DOI: https://doi.org/10.1007/s10470-018-1338-7

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