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Effect of ex situ hydrogenation on the structure and electrochemical properties of amorphous silicon thin film

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Abstract

Nickel-metal hydride (Ni-MH) batteries were widely used due to their various advantages, but its further application and development have been seriously hindered by the low electrochemical discharge capacity of conventional hydrogen storage alloy electrode. The hydrogenated amorphous silicon (a-Si:H) thin film electrode for Ni-MH battery has been proven to have a dramatic electrochemical capacity. We prepared a-Si:H thin films by a two-step process of rf-sputtering followed by hydrogenation, and investigated the effect of hydrogenation on the structure and electrochemical properties of which as an anode. The maximum discharge capacity of a-Si:H thin film electrode after hydrogenation increases from initial 180 mAh·g−1to 1827 mAh·g−1, which is over tenfold that of as-deposited hydrogen-less a-Si thin film electrode. Then, the preliminary relationships between hydrogen content and electrochemical performance of a-Si:H thin film electrode were analyzed, and several negative factors of electrochemical performance for a-Si:H thin film electrode were proposed.

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Funding

This work is financially supported by national natural science foundation of china (22065020).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou, China

    Hai-min Zhang & Yong-chun Luo

  2. School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, China

    Hai-min Zhang, Yong-chun Luo, Song-ting Yang & Yu-jie Xiang

  3. School of Science, Lanzhou University of Technology, Lanzhou, China

    Hai-min Zhang

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  1. Hai-min Zhang
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  2. Yong-chun Luo
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Correspondence to Hai-min Zhang or Yong-chun Luo.

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Zhang, Hm., Luo, Yc., Yang, St. et al. Effect of ex situ hydrogenation on the structure and electrochemical properties of amorphous silicon thin film. J Solid State Electrochem 25, 2539–2548 (2021). https://doi.org/10.1007/s10008-021-05038-1

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  • DOI: https://doi.org/10.1007/s10008-021-05038-1

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