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Quantitative analysis of temperature effect on SOI piezoresistive pressure sensors

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Abstract

Quantitative analysis of the temperature effect on piezoresistive pressure sensor response for operation at 200 bar, 200 °C was carried out through FEM simulations. Pressure sensor design based on bulk micromachined silicon diaphragm of geometry of 1 mm × 1 mm and thickness of 200 µm was used for this study. The location of the piezoresistors on the diaphragms was optimized for obtaining maximum sensitivity. Subsequently, the temperature effect on the response of pressure sensor was simulated in the temperature range of 25–200 °C for piezoresistive doping concentration of 1019 cm−3. Based on the simulation results, a quantitative data for variation of the pressure sensor response with temperature is presented. Pressure sensor with boron doped piezoresistors of 1019 cm−3 doping was observed to show decrease of sensitivity of 1.47 × 10−3 V/V/MPa at 200 °C compared to the sensitivity of 1.86 × 10−3 V/V/MPa at 25 °C.

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Authors and Affiliations

  1. Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai, 400085, India

    Vinod Belwanshi & Anita Topkar

  2. Homi Bhabha National Institute, Anushaktinagar, Mumbai, 400094, India

    Vinod Belwanshi & Anita Topkar

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  1. Vinod Belwanshi
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  2. Anita Topkar
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Correspondence to Anita Topkar.

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Belwanshi, V., Topkar, A. Quantitative analysis of temperature effect on SOI piezoresistive pressure sensors. Microsyst Technol 23, 2719–2725 (2017). https://doi.org/10.1007/s00542-016-3102-1

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  • DOI: https://doi.org/10.1007/s00542-016-3102-1

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