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Temperature stability and improved energy storage efficiency of BaBi2Nb2O9: Er3+/Yb3+ relaxor ferroelectric ceramic under moderate electric fields

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Abstract

In this paper, undoped BaBi2−x−yNb2ErxYbyO9 (BBN), Er3+ doped BBN, and a series of Er3+/Yb3+ co-doped BBN ferroelectric ceramic is synthesized by the solid-state method to study the structural, dielectric, ferroelectric, and energy storage behavior of the prepared ceramic. XRD spectra revealed orthorhombic geometry and Fmmm phase group of each prepared ceramic. SEM micrograph shows dense microstructures similar to square-shaped structures. Two FTIR bands at 619 and 822 cm−1 are observed, displaying the characteristic peaks of the Aurivillius phase. Four Raman bands are detected for undoped BBN, while twelve are visible in Er3+/Yb3+ doped BBN compositions. Further, this work utilizes a comparable method to correlate Nb–O stretching frequencies with their corresponding bond lengths using Herschbach’s exponential function. Temperature-dependent dielectric studies show considerable dispersion below and above maximum temperature (Tm), and the dielectric constant (εʹ) decreases with an increase in frequency. The dielectric loss (ɛʺ) curves are quite diffused, and shifts in the maxima with frequency have been observed, thus validating the relaxor behavior of all the prepared BBN compositions. The slimmer PE curves were obtained under moderate electric fields ranging from 75 to 100 kV/cm. The energy storage parameters (W, Wrec, η) are improved with increasing applied electric field. The energy storage efficiency (η) obtained for undoped, Er3+ doped, and Er3+/Yb3+ co-doped BBN ceramics are 78.25%, 83.39%, and 90.87%, respectively. The energy storage parameters revealed good temperature stability from 303 to 415 K, indicating that the synthesized material might aid in developing modern electronic equipment for energy storage applications.

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Acknowledgements

The authors would like to recognize the Computational and Functional Material Research Lab (CFMRL), Department of Applied Physics, Delhi Technological University, for providing all the facilities to conduct this research. Also, one of the authors thanks CSIR (08/0133(15560)) for their generous financial assistance.

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Authors and Affiliations

  1. CFMRL, Department of Applied Physics, Delhi Technological University, New Delhi, India

    Ankita Banwal, Bharti Singh & Renuka Bokolia

  2. Department of Physics, Hindu College, University of Delhi, New Delhi, India

    Manoj Verma

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  1. Ankita Banwal
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Contributions

AB: Conceptualization, data curation, writing-original draft, made all the measurements. MV: XRD analysis, writing-editing, and Raman spectroscopy. BS: FTIR analysis, data curation, writing-editing. RB: Supervision, reviewing, and editing of the original draft.

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Correspondence to Renuka Bokolia.

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Banwal, A., Verma, M., Singh, B. et al. Temperature stability and improved energy storage efficiency of BaBi2Nb2O9: Er3+/Yb3+ relaxor ferroelectric ceramic under moderate electric fields. Appl. Phys. A 130, 334 (2024). https://doi.org/10.1007/s00339-024-07475-x

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