Abstract
Y2Ti2O7:Cr3+/Yb3+/Nd3+ phosphors with broadband near-infrared emission were developed by a high-temperature solid-state method. Under the excitation of 405 nm light, it shows broadband near-infrared emission from 650 to 1050 nm. Y2Ti2O7:Cr3+/Yb3+/Nd3+ phosphors present excellent bright luminescence and thermal quenching resistance. The energy transfer mechanism between Cr3+/Nd3+/Yb3+ ions was elucidated. By using the energy transfer from Cr3+-Nd3+-Yb3+, the excitation efficiency of Yb3+ at 405 nm is greatly improved, and the strong NIR emission centered at approximately 975 nm is well coupled with the absorption band of silicon solar cells. The Y2Ti2O7:0.005Cr3+/0.1Yb3+/0.01Nd3+ phosphors were assembled with a commercial 365 nm InGaN chip to fabricate a near-infrared LED device that can work under operating electric currents of 100–900 mA. In short, Y2Ti2O7:Cr3+/Yb3+/Nd3+ phosphors are suitable for near-infrared LED applications.
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This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11704056, 12274049 and 11774042) and Fundamental Research Funds for the Central Universities (grant No. 3132023519).
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Han, Z., Yu, H., Cong, S. et al. Wide near-infrared II emissions and LED application of Y2Ti2O7: Cr3+/Yb3+/Nd3+ phosphors. Appl. Phys. A 129, 764 (2023). https://doi.org/10.1007/s00339-023-07023-z
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DOI: https://doi.org/10.1007/s00339-023-07023-z