Abstract
A series of host-activated Tb3+ and Eu3+-co-doped CaNb2O6 (CNO) phosphors with tunable luminescence were synthesized via high-temperature solid-state method with the purpose of developing single-component phosphors for white light-emitting diode (LED) devices. Benefiting from blue broadband emission of CNO and multiple energy transfer of NbO43− → Tb3+ → Eu3+, white light-emitting CNO:Tb3+, Eu3+ phosphors were achieved by reasonably adjusting the doping content of Tb3+ and Eu3+ ions. Two typical white light-emitting phosphors, CNO:0.015Tb3+, 0.02Eu3+ with color coordinate (0.33, 0.33) and CNO:0.10Tb3+, 0.05Eu3+ with color coordinate (0.40, 0.39), could maintain 63% and 73% of the initial integral intensity at 150 °C and had good color stability. Subsequently, the representative CNO:0.015Tb3+, 0.02Eu3+ phosphors were successfully applied to a 275 nm ultraviolet chip to fabricate a white LED device with a low correlated color temperature of 3464 K and a high color rendering index of 86.0. The above results indicate that synthesized single-component white light-emitting CNO:Tb3+, Eu3+ phosphors have good application prospects in the field of white LED. Moreover, this strategy of using self-activated host and multiple energy transfer also provides guidance for the design of novel white light-emitting phosphors.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
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This work is supported by the Program for GaN epitaxy and preparation of semiconductor power devices (KH186057).
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All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by AX, JT, and CH. The first draft of the manuscript was written by AX and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Xiong, A., Tan, J. & Han, C. Multiple energy transfer between CaNb2O6:Tb3+, Eu3+ for single-component white light-emitting phosphors. J Mater Sci: Mater Electron 33, 3384–3396 (2022). https://doi.org/10.1007/s10854-021-07536-4
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DOI: https://doi.org/10.1007/s10854-021-07536-4