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Effects of Er3+ dopant on polymorphic phase boundaries and electrical properties of Sn4+modified Ba1−yErySn0.06Ti0.94O3 multifunctional ceramics

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Abstract

Ferroelectric ceramic compositions of Ba1−yErySn0.06Ti0.94O3 (0 ≤ y ≤ 0.9 mol%) modified with varying erbium content prepared by solid-state reaction method have been investigated for their structural, electrical, and light upconversion properties. Erbium (Er) dopant reveals a distinct change in the dielectric phase transitions and exhibit multifunctional properties. The coexistence of orthorhombic and tetragonal phases is identified using Rietveld refinement. Increasing Er content increases the tetragonal phase fraction, reduces the tetragonal distortion and inhibits the grain growth. Raman spectroscopy reveals preferential substitution of Er3+ for Ba2+ and shows additional modes at ~ 335, ~ 442, ~ 621, ~ 669, and ~ 786 cm−1. Rhombohedral-to-orthorhombic-to-tetragonal phase transitions (TR–O and TO–T) shift to lower temperatures, and the tetragonal-to-cubic phase transition (TT–C) remains unchanged as evidenced through dielectric and reversible heat capacity measurements. Increasing Er content widens the transition zone width (TT–C − TO–T = ΔTPTTR) from ~ 39 to 60 °C and extends the useful application range. Increasing Er content decreases DC resistivity (ρdc) from ~ 9.54 to 4.21 × 1011 Ω-cm, decreases remnant polarization from 2.64 to 1.85 µC cm−2, and a maximum piezoelectric coefficient ~ 179 pC N−1 is observed for y = 0.3 mol%. The sensitivity of temperature dependent light upconversion reaches its maximum value of 0.00344 K−1 at ~ 450 K for y = 0.5 mol%.

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Acknowledgements

One of the authors (Mohd Azaj Ansari) is thankful to University Grants Commission (UGC), India, for providing financial assistant vide letter No. Ref: FOS-1/114/PhD/4805, and Roll No 512429, for the Junior Research Fellowship (JRF:2015-2017) and Senior Research Fellowship (SRF:2017-2020). The authors wish to thank University of Delhi for the central instrument facility at the University Science Instrument Centre (USIC) and Guru Jambheshwar University of Science and Technology, Hisar (Haryana) for using the Novo-Control impedance analyzer under DST (FIST) sponsored programme for the measurement of dielectric properties.

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Authors and Affiliations

  1. Department of Physics and Astrophysics, University of Delhi, Delhi, 11007, India

    Mohd Azaj Ansari & K. Sreenivas

  2. Defence Metallurgical Research Laboratory (DMRL) Kanchanbagh, Hyderabad, 500079, India

    A. R. James

  3. Laser Science and Technology Centre (LASTEC) Metcalfe House, DRDO New Delhi, Delhi, 110054, India

    K. Zimik

  4. Department of Applied Physics, Delhi Technological University, Bawana Road, Delhi, 110042, India

    Renuka Bokolia

  5. Department of Physics, Guru Jambheshwar University of Science and Technology Haryana, Hisar, Haryana, 125001, India

    R. S. Kundu

  6. Department of Physics, Keshav Mahavidyalaya University of Delhi, Delhi, 110034, India

    Mohd Azaj Ansari

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  1. Mohd Azaj Ansari
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Ansari, M.A., James, A.R., Zimik, K. et al. Effects of Er3+ dopant on polymorphic phase boundaries and electrical properties of Sn4+modified Ba1−yErySn0.06Ti0.94O3 multifunctional ceramics. Appl. Phys. A 128, 1000 (2022). https://doi.org/10.1007/s00339-022-06147-y

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