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Design and investigation of split (\(n/n^-\)) buffer layer semi-superjunction IGBT

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Abstract

In this paper, an asymmetric semi-superjunction (SJ) insulated gate bipolar transistor (IGBT) is proposed and investigated. The buffer layer of proposed device is split into two unequal segments with decreasing order of doping in x-direction. One segment is moderately doped, named \(B_{N}^{~(+)}\), while other is low doped known as \(B_{N}^{~(-)}\). Region \(B_{N}^{~(-)}\) offers maximum flow of carriers, resulting in increase of collector current density with similar breakdown voltage (BV). In off-state, excess electric field exists due to high voltage. This needs to be restricted which is achieved by \(B_{N}^{~(+)}\) region. In semi-SJ device drift resistance is reduced which gives a better performance in the off-state, leading to the lower turn-off loss. Outcomes of TCAD simulation result show a 50.6% reduction in on-state resistance without degrading the BV. Furthermore, 48.8% and 20.3% reduction in turn-off loss and forward voltage drop, respectively, are also observed.

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Authors and Affiliations

  1. Electronics and Communication Department, NIT Raipur, Raipur, India

    Namrata Gupta & Prannoy Roy

  2. NIT Raipur, Raipur, India

    Alok Naugarhiya

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  1. Namrata Gupta
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  2. Prannoy Roy
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Gupta, N., Roy, P. & Naugarhiya, A. Design and investigation of split (\(n/n^-\)) buffer layer semi-superjunction IGBT. Appl. Phys. A 128, 376 (2022). https://doi.org/10.1007/s00339-022-05497-x

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